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STP80NF70

STP80NF70
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 4.80$ 4.80$
5 - 9 4.56$ 4.56$
10 - 24 4.32$ 4.32$
25 - 49 4.08$ 4.08$
50 - 77 3.76$ 3.76$
Quantity U.P
1 - 4 4.80$ 4.80$
5 - 9 4.56$ 4.56$
10 - 24 4.32$ 4.32$
25 - 49 4.08$ 4.08$
50 - 77 3.76$ 3.76$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 77
Set of 1

STP80NF70. C(in): 2550pF. Cost): 550pF. Channel type: N. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 392A. ID (T=100°C): 68A. ID (T=25°C): 98A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 80NF70. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 0.0098 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 17 ns. Technology: STripFET II POWER MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 68V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 01:25.

Equivalent products :

Quantity in stock : 69
IRF8010

IRF8010

C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 90 ns. T...
IRF8010
C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 320A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 260W. On-resistance Rds On: 12m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no
IRF8010
C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 90 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 320A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 260W. On-resistance Rds On: 12m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no
Set of 1
2.33$ VAT incl.
(2.33$ excl. VAT)
2.33$

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