IRF5210

Quantity	excl. VAT	VAT incl.
1 - 4	2.97$	2.97$
5 - 9	2.82$	2.82$
10 - 24	2.67$	2.67$
25 - 49	2.52$	2.52$
50 - 99	2.46$	2.46$
100 - 116	2.26$	2.26$

Quantity	U.P
1 - 4	2.97$	2.97$
5 - 9	2.82$	2.82$
10 - 24	2.67$	2.67$
25 - 49	2.52$	2.52$
50 - 99	2.46$	2.46$
100 - 116	2.26$	2.26$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 116

Set of 1

IRF5210. C(in): 2700pF. Cost): 790pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 140A. ID (T=100°C): 29A. ID (T=25°C): 40A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.06 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 79 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 25/12/2024, 13:25.

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Delivery in 2-3 days, with postal tracking!