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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

513 products available
Products per page :
1...91011 1213...21
Quantity in stock : 106
FR103

FR103

Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: 'Fast Recovery Rectifiers'. For...
FR103
Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: 'Fast Recovery Rectifiers'. Forward current (AV): 1A. IFSM: 30A. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. VRRM: 200V. Spec info: 30App/8.3ms
FR103
Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: 'Fast Recovery Rectifiers'. Forward current (AV): 1A. IFSM: 30A. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. VRRM: 200V. Spec info: 30App/8.3ms
Set of 1
0.21$ VAT incl.
(0.21$ excl. VAT)
0.21$
Quantity in stock : 4210
FR154

FR154

Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals:...
FR154
Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 400V
FR154
Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 400V
Set of 1
0.24$ VAT incl.
(0.24$ excl. VAT)
0.24$
Quantity in stock : 266
FR155

FR155

Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals:...
FR155
Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 600V
FR155
Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 600V
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 27
FR157

FR157

Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semic...
FR157
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1.5A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)
FR157
Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1.5A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)
Set of 1
1.49$ VAT incl.
(1.49$ excl. VAT)
1.49$
Quantity in stock : 547
FR1J

FR1J

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor m...
FR1J
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 1A. IFSM: 30A. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Spec info: IFSM--30Ap t=10mS
FR1J
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 1A. IFSM: 30A. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Spec info: IFSM--30Ap t=10mS
Set of 10
1.59$ VAT incl.
(1.59$ excl. VAT)
1.59$
Quantity in stock : 362
FR1M

FR1M

Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoH...
FR1M
Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Housing: DO-214. Housing (according to data sheet): DO-214AC ( SMA ). VRRM: 1000V. Spec info: 30App/10ms
FR1M
Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Housing: DO-214. Housing (according to data sheet): DO-214AC ( SMA ). VRRM: 1000V. Spec info: 30App/10ms
Set of 10
0.99$ VAT incl.
(0.99$ excl. VAT)
0.99$
Quantity in stock : 2377
FR207

FR207

Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semic...
FR207
Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 2A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)
FR207
Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 2A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)
Set of 1
0.25$ VAT incl.
(0.25$ excl. VAT)
0.25$
Quantity in stock : 943
FR2J

FR2J

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor m...
FR2J
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 2A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Spec info: IFSM--50Ap t=10mS
FR2J
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 2A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Spec info: IFSM--50Ap t=10mS
Set of 5
0.85$ VAT incl.
(0.85$ excl. VAT)
0.85$
Quantity in stock : 4053
FR2M

FR2M

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor m...
FR2M
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 2A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--50Ap t=10mS
FR2M
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 2A. IFSM: 50A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--50Ap t=10mS
Set of 1
0.22$ VAT incl.
(0.22$ excl. VAT)
0.22$
Quantity in stock : 90
FR305

FR305

Semiconductor material: silicon. Forward current (AV): 3A. Note: FAST RECOVERY RECTIFIER. Note: IFSM...
FR305
Semiconductor material: silicon. Forward current (AV): 3A. Note: FAST RECOVERY RECTIFIER. Note: IFSM--200Ap/8.3mS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9x5.3mm ). VRRM: 600V
FR305
Semiconductor material: silicon. Forward current (AV): 3A. Note: FAST RECOVERY RECTIFIER. Note: IFSM--200Ap/8.3mS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9x5.3mm ). VRRM: 600V
Set of 1
0.44$ VAT incl.
(0.44$ excl. VAT)
0.44$
Quantity in stock : 38
FR3D

FR3D

Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. F...
FR3D
Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 3A. IFSM: 100A. Note: 100App/10ms. Number of terminals: 2. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). Operating temperature: -50...+150°C. VRRM: 200V
FR3D
Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 3A. IFSM: 100A. Note: 100App/10ms. Number of terminals: 2. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). Operating temperature: -50...+150°C. VRRM: 200V
Set of 1
0.45$ VAT incl.
(0.45$ excl. VAT)
0.45$
Quantity in stock : 470
FR3J

FR3J

Cj: 60pF. Trr Diode (Min.): 500 sn. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFI...
FR3J
Cj: 60pF. Trr Diode (Min.): 500 sn. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 3A. IFSM: 100A. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Spec info: Ifsm 100App / 8.3ms
FR3J
Cj: 60pF. Trr Diode (Min.): 500 sn. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 3A. IFSM: 100A. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Spec info: Ifsm 100App / 8.3ms
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$
Quantity in stock : 683
FR3M

FR3M

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor m...
FR3M
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 3A. IFSM: 100A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO214AB. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: Ifsm 100Ap (t=10ms)
FR3M
Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 3A. IFSM: 100A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO214AB. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: Ifsm 100Ap (t=10ms)
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 3025
FR607

FR607

Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semi...
FR607
Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 200A. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x7.2mm ) ( R-6 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 1000V. Spec info: IFSM--200Ap/8.3mS
FR607
Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 200A. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x7.2mm ) ( R-6 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 1000V. Spec info: IFSM--200Ap/8.3mS
Set of 1
0.42$ VAT incl.
(0.42$ excl. VAT)
0.42$
Quantity in stock : 127
FUF5406

FUF5406

Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semico...
FUF5406
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Rectifier. Forward current (AV): 3A. IFSM: 150A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x5.2mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Spec info: Ifms 150Ap t=8.3ms
FUF5406
Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Rectifier. Forward current (AV): 3A. IFSM: 150A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x5.2mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 600V. Spec info: Ifms 150Ap t=8.3ms
Set of 1
0.23$ VAT incl.
(0.23$ excl. VAT)
0.23$
Quantity in stock : 37
GI824

GI824

Semiconductor material: silicon. Forward current (AV): 5A. VRRM: 400V...
GI824
Semiconductor material: silicon. Forward current (AV): 5A. VRRM: 400V
GI824
Semiconductor material: silicon. Forward current (AV): 5A. VRRM: 400V
Set of 1
4.89$ VAT incl.
(4.89$ excl. VAT)
4.89$
Quantity in stock : 4932
GP02-40

GP02-40

Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semicondu...
GP02-40
Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: 'High Voltage Glass Passivated Junction Rectifier'. Forward current (AV): 0.25A. IFSM: 15A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V. VRRM: 4000V. Spec info: IFSM--15App/8.3mS
GP02-40
Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: 'High Voltage Glass Passivated Junction Rectifier'. Forward current (AV): 0.25A. IFSM: 15A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V. VRRM: 4000V. Spec info: IFSM--15App/8.3mS
Set of 1
0.38$ VAT incl.
(0.38$ excl. VAT)
0.38$
Quantity in stock : 41
HER103

HER103

Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: sili...
HER103
Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Equivalents: HER103G. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 200V. Number of terminals: 2
HER103
Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Equivalents: HER103G. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 200V. Number of terminals: 2
Set of 10
1.60$ VAT incl.
(1.60$ excl. VAT)
1.60$
Quantity in stock : 510
HER105

HER105

Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: sili...
HER105
Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Forward current (AV): 1A. IFSM: 30A. Equivalents: HER105G. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Number of terminals: 2
HER105
Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Forward current (AV): 1A. IFSM: 30A. Equivalents: HER105G. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Number of terminals: 2
Set of 10
1.58$ VAT incl.
(1.58$ excl. VAT)
1.58$
Quantity in stock : 1723
HER108

HER108

Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: sili...
HER108
Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Forward current (AV): 1A. IFSM: 30A. Equivalents: HER108G. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Number of terminals: 2
HER108
Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Forward current (AV): 1A. IFSM: 30A. Equivalents: HER108G. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. VRRM: 1000V. Number of terminals: 2
Set of 10
1.39$ VAT incl.
(1.39$ excl. VAT)
1.39$
Quantity in stock : 580
HER303

HER303

Cj: 70pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switc...
HER303
Cj: 70pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 3A. IFSM: 150A peak. MRI (max): 150uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 (5.6 x 9.5mm). Operating temperature: -60...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 200V. Number of terminals: 2. Note: high efficiency rectifier diode. Spec info: Ifsm 150Ap T=8.3ms
HER303
Cj: 70pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 3A. IFSM: 150A peak. MRI (max): 150uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 (5.6 x 9.5mm). Operating temperature: -60...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 200V. Number of terminals: 2. Note: high efficiency rectifier diode. Spec info: Ifsm 150Ap T=8.3ms
Set of 1
0.26$ VAT incl.
(0.26$ excl. VAT)
0.26$
Quantity in stock : 41
HER304

HER304

Cj: 80pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switc...
HER304
Cj: 80pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 3A. IFSM: 125A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 300V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Spec info: Ifsm 125Ap T=8.3ms
HER304
Cj: 80pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 3A. IFSM: 125A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 300V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Spec info: Ifsm 125Ap T=8.3ms
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 590
HER305

HER305

Cj: 70pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switc...
HER305
Cj: 70pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 3A. IFSM: 150A. MRI (max): 150uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 (9.5x5.6mm). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Weight: 0.4g. Spec info: Ifsm 150Ap T=8.3ms
HER305
Cj: 70pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 3A. IFSM: 150A. MRI (max): 150uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 (9.5x5.6mm). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Weight: 0.4g. Spec info: Ifsm 150Ap T=8.3ms
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 412
HER308

HER308

Cj: 80pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switc...
HER308
Cj: 80pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 3A. IFSM: 125A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Spec info: Ifsm 125Ap T=8.3ms
HER308
Cj: 80pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 3A. IFSM: 125A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Spec info: Ifsm 125Ap T=8.3ms
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 126
HER608

HER608

Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV...
HER608
Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 6A. IFSM: 150A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 (8.8x7mm). Tr: 75 ns. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: 150Ap/8.3ms
HER608
Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 6A. IFSM: 150A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 (8.8x7mm). Tr: 75 ns. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: 150Ap/8.3ms
Set of 1
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$
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