Standard and Rectifier Diodes

Forward current (AV): 50A. IFSM: 280A. Housing: TO-247. Housing (according to data sheet): TO-247-2LD, CASE 340CL. VRRM: 1200V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 400uA. MRI (min): 200uA. Schottky diode?: yes. Assembly/installation: PCB through-hole mounting. Technology: Silicon Carbide (SiC) Schottky. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.45V. Number of terminals: 2. Used for: can also be used for solar panel systems. Function: SMPS, Solar Inverter, UPS, Power Switching Circuits. Spec info: Ifsm--280App

Forward current (AV): 10A. IFSM: 60A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 40V. Conditioning: plastic tube. Trr Diode (Min.): 100 ns. Double: Double. Semiconductor material: Sb. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V. Quantity per case: 2. Number of terminals: 3. Note: Schottky diode. Note: Ifsm--60A/50Hz. Conditioning unit: 50. Note: dual silicon diode

Forward current (AV): 4A. Housing: TO-220. Housing (according to data sheet): TO-220/2. VRRM: 600V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Number of terminals: 2

Forward current (AV): 3A. Housing: TO-220. Housing (according to data sheet): TO-220/2. VRRM: 1000V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Number of terminals: 2. Note: SAMSUNG CHASS.KS3A D802

Forward current (AV): 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 200V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Note: SAMSUNG. Note: -RECTIFIER

Forward current (AV): 5A. VRRM: 200V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Number of terminals: 2. Note: 0402-000491. Note: YG911S2. Note: -RECTIFIER

Forward current (AV): 2.5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 200V. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Note: SAMSUNG 0402-000431. Note: rectifier diode

Housing (according to data sheet): TOP-3P. Assembly/installation: PCB through-hole mounting. Note: DAMPER +MODULATION. Note: dual silicon diode

Forward current (AV): 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V. Double: Double. Semiconductor material: silicon. Assembly/installation: PCB through-hole mounting. Note: Schottky diode. Note: Ifsm--50A. Note: dual silicon diode

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 100V. Semiconductor material: silicon. Note: 'Fast Recovery Rectifiers'. Note: 30App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: 'Fast Recovery Rectifiers'. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Spec info: 30App/8.3ms

Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 400V. Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 600V. Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 1.5A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 1000V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: IFSM--60Ap (t=8.3ms)

Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: IFSM--30Ap t=10mS

Housing: DO-214. Housing (according to data sheet): DO-214AC ( SMA ). VRRM: 1000V. Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: 30App/10ms

Forward current (AV): 2A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 1000V. Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. Spec info: IFSM--60Ap (t=8.3ms)

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: IFSM--50Ap t=10mS

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: IFSM--50Ap t=10mS

Forward current (AV): 3A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9x5.3mm ). VRRM: 600V. Semiconductor material: silicon. Note: FAST RECOVERY RECTIFIER. Note: IFSM--200Ap/8.3mS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). VRRM: 200V. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Note: 100App/10ms. Number of terminals: 2. Operating temperature: -50...+150°C

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). VRRM: 600V. Cj: 60pF. Trr Diode (Min.): 500 sn. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: Ifsm 100App / 8.3ms

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC DO214AB. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. Spec info: Ifsm 100Ap (t=10ms)

Forward current (AV): 6A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x7.2mm ) ( R-6 ). VRRM: 1000V. Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. Spec info: IFSM--200Ap/8.3mS

Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x5.2mm ). VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Rectifier. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V. Spec info: Ifms 150Ap t=8.3ms