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Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

544 products available
Products per page :
Quantity in stock : 35
FMP3FU

FMP3FU

Housing (according to data sheet): TOP-3P. Note: dual silicon diode. Note: DAMPER +MODULATION. Assem...
FMP3FU
Housing (according to data sheet): TOP-3P. Note: dual silicon diode. Note: DAMPER +MODULATION. Assembly/installation: PCB through-hole mounting
FMP3FU
Housing (according to data sheet): TOP-3P. Note: dual silicon diode. Note: DAMPER +MODULATION. Assembly/installation: PCB through-hole mounting
Set of 1
5.91$ VAT incl.
(5.91$ excl. VAT)
5.91$
Quantity in stock : 94
FMQ2FUR

FMQ2FUR

Forward current (AV): 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V...
FMQ2FUR
Forward current (AV): 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V. Double: Double. Semiconductor material: silicon. Note: dual silicon diode. Note: Schottky diode. Note: Ifsm--50A. Assembly/installation: PCB through-hole mounting
FMQ2FUR
Forward current (AV): 5A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V. Double: Double. Semiconductor material: silicon. Note: dual silicon diode. Note: Schottky diode. Note: Ifsm--50A. Assembly/installation: PCB through-hole mounting
Set of 1
2.19$ VAT incl.
(2.19$ excl. VAT)
2.19$
Quantity in stock : 46
FR102

FR102

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 100V. Semi...
FR102
Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 100V. Semiconductor material: silicon. Note: 'Fast Recovery Rectifiers'. Note: 30App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
FR102
Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 100V. Semiconductor material: silicon. Note: 'Fast Recovery Rectifiers'. Note: 30App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 10
1.24$ VAT incl.
(1.24$ excl. VAT)
1.24$
Quantity in stock : 106
FR103

FR103

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM:...
FR103
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: 'Fast Recovery Rectifiers'. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: 30App/8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V
FR103
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: 'Fast Recovery Rectifiers'. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: 30App/8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V
Set of 1
0.21$ VAT incl.
(0.21$ excl. VAT)
0.21$
Quantity in stock : 4210
FR154

FR154

Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 400V. Semiconductor material: silico...
FR154
Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 400V. Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
FR154
Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 400V. Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 1
0.24$ VAT incl.
(0.24$ excl. VAT)
0.24$
Quantity in stock : 266
FR155

FR155

Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 600V. Semiconductor material: silico...
FR155
Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 600V. Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
FR155
Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 600V. Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 29
FR157

FR157

Forward current (AV): 1.5A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15. VRR...
FR157
Forward current (AV): 1.5A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 1000V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Spec info: IFSM--60Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
FR157
Forward current (AV): 1.5A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 1000V. Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Spec info: IFSM--60Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
1.49$ VAT incl.
(1.49$ excl. VAT)
1.49$
Quantity in stock : 515
FR1J

FR1J

Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC...
FR1J
Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
FR1J
Forward current (AV): 1A. IFSM: 30A. Housing: DO-214. Housing (according to data sheet): SMA DO214AC. VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 10
1.59$ VAT incl.
(1.59$ excl. VAT)
1.59$
Quantity in stock : 352
FR1M

FR1M

Housing: DO-214. Housing (according to data sheet): DO-214AC ( SMA ). VRRM: 1000V. Semiconductor mat...
FR1M
Housing: DO-214. Housing (according to data sheet): DO-214AC ( SMA ). VRRM: 1000V. Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: 30App/10ms
FR1M
Housing: DO-214. Housing (according to data sheet): DO-214AC ( SMA ). VRRM: 1000V. Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Spec info: 30App/10ms
Set of 10
0.99$ VAT incl.
(0.99$ excl. VAT)
0.99$
Quantity in stock : 2299
FR207

FR207

Forward current (AV): 2A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x...
FR207
Forward current (AV): 2A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 1000V. Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--60Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
FR207
Forward current (AV): 2A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 1000V. Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--60Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
Set of 1
0.25$ VAT incl.
(0.25$ excl. VAT)
0.25$
Quantity in stock : 941
FR2J

FR2J

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA...
FR2J
Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
FR2J
Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). VRRM: 600V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 5
0.85$ VAT incl.
(0.85$ excl. VAT)
0.85$
Quantity in stock : 4033
FR2M

FR2M

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA...
FR2M
Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
FR2M
Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB DO214AA ( 4.7x3.7x2.6 ). VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap t=10mS. Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.22$ VAT incl.
(0.22$ excl. VAT)
0.22$
Quantity in stock : 90
FR305

FR305

Forward current (AV): 3A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9x5.3mm ). VRRM...
FR305
Forward current (AV): 3A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9x5.3mm ). VRRM: 600V. Semiconductor material: silicon. Note: FAST RECOVERY RECTIFIER. Note: IFSM--200Ap/8.3mS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
FR305
Forward current (AV): 3A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9x5.3mm ). VRRM: 600V. Semiconductor material: silicon. Note: FAST RECOVERY RECTIFIER. Note: IFSM--200Ap/8.3mS. Number of terminals: 2. Assembly/installation: PCB through-hole mounting
Set of 1
0.44$ VAT incl.
(0.44$ excl. VAT)
0.44$
Quantity in stock : 38
FR3D

FR3D

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (...
FR3D
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). VRRM: 200V. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Note: 100App/10ms. Number of terminals: 2. Operating temperature: -50...+150°C
FR3D
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). VRRM: 200V. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Note: 100App/10ms. Number of terminals: 2. Operating temperature: -50...+150°C
Set of 1
0.45$ VAT incl.
(0.45$ excl. VAT)
0.45$
Quantity in stock : 470
FR3J

FR3J

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (...
FR3J
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). VRRM: 600V. Cj: 60pF. Trr Diode (Min.): 500 sn. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Spec info: Ifsm 100App / 8.3ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
FR3J
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB ( SMC ). VRRM: 600V. Cj: 60pF. Trr Diode (Min.): 500 sn. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Number of terminals: 2. Spec info: Ifsm 100App / 8.3ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.34$ VAT incl.
(0.34$ excl. VAT)
0.34$
Quantity in stock : 653
FR3M

FR3M

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC DO214A...
FR3M
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC DO214AB. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=10ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
FR3M
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC DO214AB. VRRM: 1000V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=10ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 2609
FR607

FR607

Forward current (AV): 6A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201AD (...
FR607
Forward current (AV): 6A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x7.2mm ) ( R-6 ). VRRM: 1000V. Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--200Ap/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
FR607
Forward current (AV): 6A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x7.2mm ) ( R-6 ). VRRM: 1000V. Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--200Ap/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
Set of 1
0.42$ VAT incl.
(0.42$ excl. VAT)
0.42$
Quantity in stock : 127
FUF5406

FUF5406

Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD (...
FUF5406
Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x5.2mm ). VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Rectifier. Number of terminals: 2. Spec info: Ifms 150Ap t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
FUF5406
Forward current (AV): 3A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x5.2mm ). VRRM: 600V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast Recovery Rectifier. Number of terminals: 2. Spec info: Ifms 150Ap t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
Set of 1
0.23$ VAT incl.
(0.23$ excl. VAT)
0.23$
Quantity in stock : 37
GI824

GI824

Forward current (AV): 5A. VRRM: 400V. Semiconductor material: silicon...
GI824
Forward current (AV): 5A. VRRM: 400V. Semiconductor material: silicon
GI824
Forward current (AV): 5A. VRRM: 400V. Semiconductor material: silicon
Set of 1
4.89$ VAT incl.
(4.89$ excl. VAT)
4.89$
Quantity in stock : 3860
GL1M

GL1M

VRRM: 1000V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configurati...
GL1M
VRRM: 1000V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.2V / 1A. Mounting Type: SMD. Reverse Leakage Current: 5uA / 1000V. Reverse Recovery Time (Max): 1500ns. Series: GL1
GL1M
VRRM: 1000V. Average Rectified Current per Diode: 1A. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.2V / 1A. Mounting Type: SMD. Reverse Leakage Current: 5uA / 1000V. Reverse Recovery Time (Max): 1500ns. Series: GL1
Set of 10
1.32$ VAT incl.
(1.32$ excl. VAT)
1.32$
Quantity in stock : 4932
GP02-40

GP02-40

Forward current (AV): 0.25A. IFSM: 15A. Housing: DO-41. Housing (according to data sheet): DO-41 ( D...
GP02-40
Forward current (AV): 0.25A. IFSM: 15A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( 2.7x5.2mm ). VRRM: 4000V. Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: 'High Voltage Glass Passivated Junction Rectifier'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--15App/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V
GP02-40
Forward current (AV): 0.25A. IFSM: 15A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( 2.7x5.2mm ). VRRM: 4000V. Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2us. Semiconductor material: silicon. Function: 'High Voltage Glass Passivated Junction Rectifier'. Number of terminals: 2. RoHS: yes. Spec info: IFSM--15App/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V
Set of 1
0.38$ VAT incl.
(0.38$ excl. VAT)
0.38$
Quantity in stock : 41
HER103

HER103

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM:...
HER103
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. MRI (max): 100uA. MRI (min): 5uA. Equivalents: HER103G. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
HER103
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 200V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. MRI (max): 100uA. MRI (min): 5uA. Equivalents: HER103G. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 10
1.60$ VAT incl.
(1.60$ excl. VAT)
1.60$
Quantity in stock : 510
HER105

HER105

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-2...
HER105
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 400V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER105G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
HER105
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 400V. Cj: 25pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER105G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 10
1.58$ VAT incl.
(1.58$ excl. VAT)
1.58$
Quantity in stock : 1718
HER108

HER108

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-2...
HER108
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 1000V. Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER108G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
HER108
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 1000V. Cj: 20pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: high efficiency rectifier diode. Equivalents: HER108G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.7V
Set of 10
1.39$ VAT incl.
(1.39$ excl. VAT)
1.39$
Quantity in stock : 580
HER303

HER303

Forward current (AV): 3A. IFSM: 150A peak. Housing: DO-27. Housing (according to data sheet): DO-27 ...
HER303
Forward current (AV): 3A. IFSM: 150A peak. Housing: DO-27. Housing (according to data sheet): DO-27 (5.6 x 9.5mm). VRRM: 200V. Cj: 70pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 150uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 150Ap T=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
HER303
Forward current (AV): 3A. IFSM: 150A peak. Housing: DO-27. Housing (according to data sheet): DO-27 (5.6 x 9.5mm). VRRM: 200V. Cj: 70pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 150uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 150Ap T=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.26$ VAT incl.
(0.26$ excl. VAT)
0.26$

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