Standard and Rectifier Diodes

Double: Double. Semiconductor material: silicon. Forward current (AV): 8A. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Number of terminals: 3. Note: common cathode. Note: Dual Ultrafast Plastic Rectifier. Note: Ifsm 125Aps/8.3ms

Cj: 175pF. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Double ultra-fast rectifier diode. common cathode. Forward current (AV): 15A. IFSM: 300A. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.95V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm--300Ap, t=8.3ms

Cj: 145pF. Dielectric structure: common cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Double ultra-fast rectifier diode. common cathode. Forward current (AV): 15A. IFSM: 300A. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm--300Ap, t=8.3ms

Semiconductor material: silicon. Forward current (AV): 5A. VRRM: 1200V. Note: High Speed ​​Switching. Note: Ifsm--30App. Note: high voltage and high reliability

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35ms. Semiconductor material: silicon. Function: Ultrafast with soft recovery. Forward current (AV): 6A. IFSM: 60A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F-2L. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Spec info: Low forward voltage

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 32 ns. Semiconductor material: silicon. Forward current (AV): 10A. IFSM: 100A. MRI (max): 500uA. MRI (min): 100uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F-2L. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.15V. Forward voltage Vf (min): 1.1V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Spec info: Ultrafast with soft recovery (IF=1A), <35ns

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 34 ns. Semiconductor material: silicon. Forward current (AV): 10A. IFSM: 50A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F-2L. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 2.2V. Forward voltage Vf (min): 2V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: Ultrafast with soft recovery (IF=1A), <40ns

Dielectric structure: Common anode-cathode (midpoint). Trr Diode (Min.): 90 ns. Semiconductor material: silicon. Function: 'Damper + Modulation Diode'. Forward current (AV): 6A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F-3. Operating temperature: -65...+150°C. Quantity per case: 2. Number of terminals: 3. Note: Dd--Vf--1.4...1.6V, Dm--Vf--2.0...2.2V. Note: Dd--Trr--120ns, Dm--Trr--90ns. Spec info: Dd--1500V/6A/60Ap, Dm--600V/20A/120Ap

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 50A. IFSM: 280A. MRI (max): 400uA. MRI (min): 200uA. Schottky diode?: yes. Assembly/installation: PCB through-hole mounting. Technology: Silicon Carbide (SiC) Schottky. Housing: TO-247. Housing (according to data sheet): TO-247-2LD, CASE 340CL. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.45V. VRRM: 1200V. Number of terminals: 2. Used for: can also be used for solar panel systems. Function: SMPS, Solar Inverter, UPS, Power Switching Circuits. Spec info: Ifsm--280App

Conditioning: plastic tube. Trr Diode (Min.): 100 ns. Double: Double. Semiconductor material: Sb. Forward current (AV): 10A. IFSM: 60A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.55V. VRRM: 40V. Quantity per case: 2. Number of terminals: 3. Note: Schottky diode. Note: Ifsm--60A/50Hz. Conditioning unit: 50. Note: dual silicon diode

Semiconductor material: silicon. Forward current (AV): 4A. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220/2. VRRM: 600V. Number of terminals: 2

Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220/2. VRRM: 1000V. Number of terminals: 2. Note: SAMSUNG CHASS.KS3A D802

Semiconductor material: silicon. Forward current (AV): 3A. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 200V. Note: SAMSUNG. Note: -RECTIFIER

Semiconductor material: silicon. Forward current (AV): 5A. Assembly/installation: PCB through-hole mounting. VRRM: 200V. Number of terminals: 2. Note: 0402-000491. Note: YG911S2. Note: -RECTIFIER

Semiconductor material: silicon. Forward current (AV): 2.5A. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 200V. Note: SAMSUNG 0402-000431. Note: rectifier diode

Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TOP-3P. Note: DAMPER +MODULATION. Note: dual silicon diode

Double: Double. Semiconductor material: silicon. Forward current (AV): 5A. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V. Note: Schottky diode. Note: Ifsm--50A. Note: dual silicon diode

Semiconductor material: silicon. Forward current (AV): 1A. Note: 'Fast Recovery Rectifiers'. Note: 30App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 100V

Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: 'Fast Recovery Rectifiers'. Forward current (AV): 1A. IFSM: 30A. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. VRRM: 200V. Spec info: 30App/8.3ms

Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 400V

Semiconductor material: silicon. Note: High-speed switching. Note: 60App/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. VRRM: 600V

Cj: 25pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1.5A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. Forward current (AV): 1A. IFSM: 30A. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Spec info: IFSM--30Ap t=10mS

Semiconductor material: silicon. Function: silicon fast rectifier diode. Number of terminals: 2. RoHS: yes. Housing: DO-214. Housing (according to data sheet): DO-214AC ( SMA ). VRRM: 1000V. Spec info: 30App/10ms

Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: FAST RECOVERY RECTIFIER. Forward current (AV): 2A. IFSM: 60A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 1000V. Spec info: IFSM--60Ap (t=8.3ms)