Standard and Rectifier Diodes

Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B340. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.5x5.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.5V. VRRM: 60V. Spec info: IFMS 80App/8.3ms, 60Hz

Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B360. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.5x5.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.08V. Forward voltage Vf (min): 0.6V. VRRM: 60V. Spec info: IFMS 150App/8.3ms, 60Hz

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: Sb. Function: Switch-mode Schottky, Power Rectifier. Forward current (AV): 40A. IFSM: 80A. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220 CASE 221A. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.97V. Forward voltage Vf (min): 0.71V. VRRM: 250V

Quantity per case: 2. Dielectric material: common cathode. Forward current (AV): 40A (2x20A). IFSM: 400A (2x200A). Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.7V. VRRM: 45V

Semiconductor material: Sb. Forward current (AV): 7.5A. Note: diode for switching power supply. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 45V

Semiconductor material: Sb. Forward current (AV): 7.5A. Note: diode for switching power supply. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 60V

RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Forward current [A]: 2 X 3A. Ifsm [A]: 75A. Close voltage (repetitive) Vrrm [V]: 50V. Leakage current on closing Ir [A]: 0.1mA..15mA. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 0.7V @ 3A

Function: 'High Voltage Power Schottky'. Forward current (AV): 8A. IFSM: 75A. MRI (max): 35mA. MRI (min): 1.4mA. Marking on the case: 853LG. RoHS: yes. Schottky diode?: yes. Assembly/installation: surface-mounted component (SMD). Housing: D-PAK ( TO-252 ). Housing (according to data sheet): Dpak-3. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.51V. Forward voltage Vf (min): 0.41V. VRRM: 35V

Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 20A. IFSM: 150A. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.75V. VRRM: 100V. Note: dual silicon diode. Spec info: Ifsm 150Ap

Semiconductor material: Sb. Forward current (AV): 1A. Note: Vf 0.6V/1A. Note: screen printing/SMD code B14L. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO-214AA. VRRM: 40V

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1A. IFSM: 50A. MRI (max): 5mA. MRI (min): 0.5mA. Marking on the case: B19. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO214AA. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V. VRRM: 90V. Spec info: screen printing/SMD code B19

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 130A. Marking on the case: B310. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. VRRM: 100V. Spec info: Vf 0.79V/3A, (iF=3.0A, TJ=25°C)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 100A. MRI (max): 5mA. MRI (min): 1mA. Marking on the case: B320. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.84V. Forward voltage Vf (min): 0.84V. VRRM: 200V. Spec info: Vf 0.84V/3A, (iF=3.0A, TJ=25°C)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B33. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 30 v. Spec info: Vf 0.50V/3A, (If=3.0A, TJ=25°C)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B34. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.525V. Forward voltage Vf (min): 0.525V. VRRM: 40V. Spec info: Vf 0.525V/3A, (iF=3.0A, TJ=25°C)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B36. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB CASE 403A-03 ( 4.32x3.56mm ). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V. VRRM: 60V. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C)

Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: diode module. 'Fast Recovery Epitaxial Diode (FRED)'. Forward current (AV): 75A. IFSM: 1200A. Note: Ifsm--TVJ=45°C; t=10ms (50 Hz) 1200A. Note: dimensions 92x20.8x30mm. Note: 2 diode module. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-240. Housing (according to data sheet): TO-240AA. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 2.58V. Forward voltage Vf (min): 1.8V. VRRM: 1200V. Spec info: insulation 3600V

Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 220 ns. Semiconductor material: silicon. Function: mains diode Module, high current. Forward current (AV): 880A. IFSM: n/a. Number of terminals: 3. Dimensions: 94x34x30mm. Pd (Power Dissipation, Max): 1100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Electrical insulation: 3600V, 50/60Hz. Technology: dual common cathode diode (HiPerFREDTM). Operating temperature: -40...+125°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.1V. VRRM: 400V. Pinout: M6 screws (x3). Spec info: Ifsm--Tvj=25°C, tP=10ms 13000A

Cj: 4pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ifsm--2A t=1us, 1A t=1s. Forward current (AV): 200mA. IFSM: 1A. Note: CT--4pF (VR=0V, f=1.0MHz). Note: screen printing/SMD code D6. MRI (max): 5uA. MRI (min): 25nA. Marking on the case: D6. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Threshold voltage Vf (max): 1V. VRRM: 100V

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 300 ns. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 300A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 800V. Number of terminals: 2. Note: diameter 8mm x 7.5mm. Quantity per case: 1

Semiconductor material: silicon. Forward current (AV): 10A. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1200V. Note: ScanSwitch. Note: IFSM 100Aps

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: Ultrafast “E” Series with High Reverse. Forward current (AV): 1A. IFSM: 35A. Equivalents: MUR1100ERLG. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ) ( CASE59-10 ) ( 7.3x3.4mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.75V. Forward voltage Vf (min): 1.5V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 1000. Spec info: IFSM

Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 35A. MRI (max): 5uA. MRI (min): 2uA. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): CASE 59-10 (7.3x3.4mm). Operating temperature: -65...+175°C. VRRM: 200V. Quantity per case: 1. Function: rectifier diode for switching power supply. Spec info: IFSM--35App

Cj: 55pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Forward current (AV): 15A. IFSM: 110A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.4V. Forward voltage Vf (min): 1.9V. VRRM: 1200V. Number of terminals: 2. Function: Ultra-Fast Recovery Diode. Note: ultra-fast diode. Spec info: Ifsm 110Ap

Semiconductor material: silicon. Function: Ultrafast. Forward current (AV): 15A. IFSM: 150A. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. VRRM: 600V. Number of terminals: 2