Standard and Rectifier Diodes

Quantity per case: 2. Dielectric structure: common cathode. Forward current (AV): 10A. Note: Dual Schottky Barrier Rectifier Diode. Note: 20A/150App. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 150V

Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Forward current (AV): 10A. IFSM: 75A. MRI (max): 6mA. MRI (min): 0.05mA. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO220-3. Forward voltage Vf (min): 0.9V. VRRM: 200V. Note: Dual Schottky Barrier Rectifier Diode. Spec info: Ifsm 150Ap (peak total)

Quantity per case: 2. Dielectric structure: common cathode. Double: Double. Forward current (AV): 10A/diode. Number of terminals: 3. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 45V. Function: Dual Schottky Barrier Rectifier Diode. Spec info: total 20A, IFSM 150App

Quantity per case: 2. Dielectric structure: common cathode. Forward current (AV): 10A. Note: 20A/150App. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 60V. Note: Dual Schottky Barrier Rectifier Diode

Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 2. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Dual Schottky diode. Forward current (AV): 30A. IFSM: 250A. MRI (max): 60mA. MRI (min): 1mA. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.72V. Forward voltage Vf (min): 0.6V. VRRM: 45V. Spec info: IFSM--250Ap, t=8.3ms

Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: silicon. Function: Dual Schottky diode. Forward current (AV): 30A. IFSM: 250A. MRI (max): 60mA. MRI (min): 1mA. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.65V. VRRM: 60V. Spec info: IFSM--250Ap, t=8.3ms

Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B3100. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.5x5.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.69V. VRRM: 100V. Spec info: IFMS 150App/8.3ms, 60Hz

Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B340. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.5x5.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.5V. VRRM: 60V. Spec info: IFMS 80App/8.3ms, 60Hz

Conditioning: roll. Conditioning unit: 1500. Quantity per case: 1. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B360. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 9.5x5.0mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.08V. Forward voltage Vf (min): 0.6V. VRRM: 60V. Spec info: IFMS 150App/8.3ms, 60Hz

Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: Sb. Function: Switch-mode Schottky, Power Rectifier. Forward current (AV): 40A. IFSM: 80A. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220 CASE 221A. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.97V. Forward voltage Vf (min): 0.71V. VRRM: 250V

Quantity per case: 2. Dielectric material: common cathode. Forward current (AV): 40A (2x20A). IFSM: 400A (2x200A). Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.7V. VRRM: 45V

Semiconductor material: Sb. Forward current (AV): 7.5A. Note: diode for switching power supply. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 45V

Semiconductor material: Sb. Forward current (AV): 7.5A. Note: diode for switching power supply. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 60V

Dielectric structure: common cathode. Forward current (AV): 10A. IFSM: 150A. Note: 10A-150App/diode. Assembly/installation: surface-mounted component (SMD). Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263AB ( D2Pak ). Threshold voltage Vf (max): 0.72V. Forward voltage Vf (min): 0.57V. Vr: 100V. Function: Schottky Barrier Rectifier Diode. Note: dual silicon diode. Spec info: Ifsm 1060A (p = 5us)

RoHS: yes. Component family: Schottky rectifier diode, SMD assembly. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Forward current [A]: 2 X 3A. Ifsm [A]: 75A. Close voltage (repetitive) Vrrm [V]: 50V. Leakage current on closing Ir [A]: 0.1mA..15mA. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 0.7V @ 3A

Function: 'High Voltage Power Schottky'. Forward current (AV): 8A. IFSM: 75A. MRI (max): 35mA. MRI (min): 1.4mA. Marking on the case: 853LG. RoHS: yes. Schottky diode?: yes. Assembly/installation: surface-mounted component (SMD). Housing: D-PAK ( TO-252 ). Housing (according to data sheet): Dpak-3. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.51V. Forward voltage Vf (min): 0.41V. VRRM: 35V

Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: SCHOTTKY BARRIER RECTIFIER. Forward current (AV): 20A. IFSM: 150A. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.75V. VRRM: 100V. Note: dual silicon diode. Spec info: Ifsm 150Ap

Semiconductor material: Sb. Forward current (AV): 1A. Note: Vf 0.6V/1A. Note: screen printing/SMD code B14L. Number of terminals: 2. RoHS: yes. Schottky diode?: schottky. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO-214AA. VRRM: 40V

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 1A. IFSM: 50A. MRI (max): 5mA. MRI (min): 0.5mA. Marking on the case: B19. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB DO214AA. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V. VRRM: 90V. Spec info: screen printing/SMD code B19

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 130A. Marking on the case: B310. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.79V. Forward voltage Vf (min): 0.79V. VRRM: 100V. Spec info: Vf 0.79V/3A, (iF=3.0A, TJ=25°C)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 100A. MRI (max): 5mA. MRI (min): 1mA. Marking on the case: B320. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.84V. Forward voltage Vf (min): 0.84V. VRRM: 200V. Spec info: Vf 0.84V/3A, (iF=3.0A, TJ=25°C)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B33. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 30 v. Spec info: Vf 0.50V/3A, (If=3.0A, TJ=25°C)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B34. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.525V. Forward voltage Vf (min): 0.525V. VRRM: 40V. Spec info: Vf 0.525V/3A, (iF=3.0A, TJ=25°C)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B36. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB CASE 403A-03 ( 4.32x3.56mm ). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V. VRRM: 60V. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C)

RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 3A. IFSM: 80A. Marking on the case: B36. Equivalents: Vishay VS-MBRS360-M3/9AT. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V. VRRM: 60V. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C)