Electronic components and equipment, for businesses and individuals

GI824

GI824
Quantity excl. VAT VAT incl.
1 - 4 4.89$ 4.89$
5 - 9 4.04$ 4.04$
10 - 24 3.91$ 3.91$
25 - 37 3.82$ 3.82$
Quantity U.P
1 - 4 4.89$ 4.89$
5 - 9 4.04$ 4.04$
10 - 24 3.91$ 3.91$
25 - 37 3.82$ 3.82$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 37
Set of 1

GI824. Forward current (AV): 5A. VRRM: 400V. Semiconductor material: silicon. Original product from manufacturer Samsung. Quantity in stock updated on 01/07/2025, 09:25.

Equivalent products :

Quantity in stock : 3672
BY500-800

BY500-800

Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7...
BY500-800
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 800V. RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 220A. Number of terminals: 2. Spec info: Ifsm--200App t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
BY500-800
Forward current (AV): 5A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). VRRM: 800V. RoHS: yes. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: silicon fast rectifier diode. MRI (max): 10uA. MRI (min): 220A. Number of terminals: 2. Spec info: Ifsm--200App t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V
Set of 1
0.27$ VAT incl.
(0.27$ excl. VAT)
0.27$

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