Standard and Rectifier Diodes

Forward current (AV): 70A. IFSM: 500A. Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Number of terminals: 2. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: 500Ap t=10ms, TVJ=45°C. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V

Forward current (AV): 60A. IFSM: 500A. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. VRRM: 1200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. MRI (max): 2.5mA. MRI (min): 650uA. Configuration: insulated housing, without drilling. Number of terminals: 2. Pd (Power Dissipation, Max): 190W. RoHS: yes. Spec info: 540Ap t=10ms, TVJ=45°C. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V

Housing: TO-247. Housing (according to data sheet): TO-247AD. VRRM: 1600V. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: silicon. Function: Standard Rectifier. Number of terminals: 3. RoHS: yes. Spec info: central leg (cathode D1, anode D2, in series). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.16V

Forward current (AV): 6A. Forward current (RMS): 15A. IFSM: 80A (tp=10ms). Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 1500V. Trr Diode (Min.): 75 ns. Various: High Voltage Damper Diode. Semiconductor material: silicon. Function: CRT Horizontal Deflection. MRI (max): 1mA. MRI (min): 100uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 2.3V. Forward voltage Vf (min): 1.5V

Forward current (AV): 15A. Housing: TO-220FP. Housing (according to data sheet): TO-220FPAC. VRRM: 1500V. Semiconductor material: silicon. Note: IF(AV) 4A, Vf typ 1.5V. Note: High Voltage Damper Diode. Assembly/installation: PCB through-hole mounting

Forward current (AV): 5A. IFSM: 75A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. VRRM: 1500V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 130 ns. Semiconductor material: silicon. Number of terminals: 2. Temperature: +150°C. Spec info: IFSM--75Ap T=10mS. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.1V

Forward current (AV): 0.8A. VRRM: 200V. Semiconductor material: silicon. Note: SPEC.SONY DIODA. Note: SONY 871904678

Forward current (AV): 1A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.6x4.9mm ). VRRM: 100V. Semiconductor material: silicon. Note: High Efficiency Rectifiers. Note: 30Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 100V. Semiconductor material: silicon. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 200V. Semiconductor material: silicon. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 300V. Semiconductor material: silicon. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 2A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 400V. Semiconductor material: silicon. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 5A. IFSM: 150A. Housing: DO-201. Housing (according to data sheet): DO-201AD. VRRM: 400V. Cj: 100pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultra Fast Diode. Note: Gl, S. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: 150Ap / 8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2x2.7 ). VRRM: 1600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: 30Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-214. Housing (according to data sheet): SMB / DO214AA. VRRM: 600V. Cj: 15pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 300uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tr: 75 ns. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.7V

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): SMC / DO214AB. VRRM: 600V. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 300uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tr: 75 ns. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.7V

Forward current (AV): 0.5A. VRRM: 800V. Semiconductor material: silicon

VRRM: 400V. Semiconductor material: silicon. Note: SAMSUNG. Note: B29-04.79

Forward current (AV): 5A. VRRM: 200V. Semiconductor material: silicon. Note: GI, S

Forward current (AV): 3A. VRRM: 1500V. Semiconductor material: silicon. Note: 9x7mm. Note: MONITOR DAMP. Note: D09.15

Forward current (AV): 1A. Housing: DO-214. Housing (according to data sheet): DO-214AC (SMA), 4.6x2.7mm. VRRM: 400V. Semiconductor material: silicon. Note: Super Fast Surface Mount Rectifier Diode. Note: 30App/8.3ms, ES1G SMD marking. Number of terminals: 2

Forward current (AV): 30A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Double: Double. Semiconductor material: Sb. Note: dual silicon diode. Note: Schottky diode. Note: Ifsm--250A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting

Forward current (AV): 5A. IFSM: 80A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3FP. VRRM: 1500V. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Trr Diode (Min.): 0.15us. Semiconductor material: silicon. Function: Low Loss Super High Speed ​​Rectifier. Note: DAMPER +MODULATION. Marking on the case: CO23M-15 (C023M-15). Number of terminals: 3. Spec info: IFSM--50/80Ap, t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 1.8V

Forward current (AV): 3A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 200V. Double: Double. Semiconductor material: silicon. Note: ULTRA FAST ->l<-. Note: Ifsm--50A/10mS. Assembly/installation: PCB through-hole mounting

Forward current (AV): 0.8A. VRRM: 600V. Semiconductor material: silicon. Note: GI, S