Standard and Rectifier Diodes

Cj: yes. Conditioning: plastic tube. Conditioning unit: 25. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Double: yes. Semiconductor material: silicon. Function: 'Fast Recovery'. Forward current (AV): 30A. IFSM: 300A. MRI (max): 100uA. MRI (min): 50uA. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Diode (FRED)'. Housing: TO-247. Housing (according to data sheet): TO-247AD. Threshold voltage Vf (max): 1.6V. Forward voltage Vf (min): 1.4V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm--375Ap Tp--10uS

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. Forward current (AV): 15A. IFSM: 90A. MRI (max): 0.5mA. MRI (min): 100uA. Pd (Power Dissipation, Max): 95W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.75V. Forward voltage Vf (min): 1.79V. VRRM: 1200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 50. Spec info: 90Ap t=10ms, TVJ=45°C

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. Forward current (AV): 70A. IFSM: 500A. MRI (max): 2.5mA. MRI (min): 650uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V. VRRM: 1200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 30. Spec info: 500Ap t=10ms, TVJ=45°C

Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 40 ns. Semiconductor material: silicon. Function: Diode 'soft recovery'. Forward current (AV): 60A. IFSM: 500A. MRI (max): 2.5mA. MRI (min): 650uA. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: HiPerFREDTM Epitaxial Diode. Housing: ISOPLUS247 ( TO-247 ). Housing (according to data sheet): ISOPLUS247. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 2.66V. Forward voltage Vf (min): 1.74V. VRRM: 1200V. Conditioning unit: 10. Number of terminals: 2. Configuration: insulated housing, without drilling. Quantity per case: 1. Spec info: 540Ap t=10ms, TVJ=45°C

Dielectric structure: Common anode-cathode (midpoint). Semiconductor material: silicon. Function: Standard Rectifier. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.16V. VRRM: 1600V. Quantity per case: 2. Number of terminals: 3. Spec info: central leg (cathode D1, anode D2, in series)

Trr Diode (Min.): 75 ns. Various: High Voltage Damper Diode. Semiconductor material: silicon. Function: CRT Horizontal Deflection. Forward current (AV): 6A. Forward current (RMS): 15A. IFSM: 80A (tp=10ms). MRI (max): 1mA. MRI (min): 100uA. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Threshold voltage Vf (max): 2.3V. Forward voltage Vf (min): 1.5V. VRRM: 1500V. Number of terminals: 2

Semiconductor material: silicon. Forward current (AV): 15A. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FPAC. VRRM: 1500V. Note: IF(AV) 4A, Vf typ 1.5V. Note: High Voltage Damper Diode

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 130 ns. Semiconductor material: silicon. Forward current (AV): 5A. IFSM: 75A. Temperature: +150°C. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.1V. VRRM: 1500V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--75Ap T=10mS

Semiconductor material: silicon. Forward current (AV): 0.8A. VRRM: 200V. Note: SPEC.SONY DIODA. Note: SONY 871904678

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.6x4.9mm ). VRRM: 100V. Number of terminals: 2. Note: 30Ap/8.3ms. Note: High Efficiency Rectifiers

Semiconductor material: silicon. Forward current (AV): 2A. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 100V. Number of terminals: 2. Note: Gl, S. Note: 75Ap/8.3ms

Semiconductor material: silicon. Forward current (AV): 2A. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 200V

Semiconductor material: silicon. Forward current (AV): 2A. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 300V

Semiconductor material: silicon. Forward current (AV): 2A. Note: Gl, S. Note: 75Ap/8.3ms. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x7.2mm ). VRRM: 400V

Cj: 100pF. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: Ultra Fast Diode. Forward current (AV): 5A. IFSM: 150A. Note: Gl, S. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 400V. Spec info: 150Ap / 8.3ms

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 1A. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2x2.7 ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1600V. Spec info: 30Ap

Cj: 15pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 2A. IFSM: 50A. MRI (max): 300uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMB / DO214AA. Tr: 75 ns. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.7V. VRRM: 600V

Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 100A. MRI (max): 300uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC / DO214AB. Tr: 75 ns. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.7V. VRRM: 600V

Semiconductor material: silicon. Forward current (AV): 0.5A. VRRM: 800V

Semiconductor material: silicon. Note: SAMSUNG. Note: B29-04.79. VRRM: 400V

Semiconductor material: silicon. Forward current (AV): 5A. Note: GI, S. VRRM: 200V

Semiconductor material: silicon. Forward current (AV): 3A. Note: 9x7mm. Note: MONITOR DAMP. Note: D09.15. VRRM: 1500V

Semiconductor material: silicon. Forward current (AV): 1A. Note: 30App/8.3ms, ES1G SMD marking. Number of terminals: 2. Housing: DO-214. Housing (according to data sheet): DO-214AC (SMA), 4.6x2.7mm. VRRM: 400V. Note: Super Fast Surface Mount Rectifier Diode

Double: Double. Semiconductor material: Sb. Forward current (AV): 30A. Note: Schottky diode. Note: Ifsm--250A. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. VRRM: 40V. Note: dual silicon diode

Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Trr Diode (Min.): 0.15us. Semiconductor material: silicon. Function: Low Loss Super High Speed ​​Rectifier. Forward current (AV): 5A. IFSM: 80A. Note: DAMPER +MODULATION. Marking on the case: CO23M-15 (C023M-15). Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3FP. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 1.8V. VRRM: 1500V. Spec info: IFSM--50/80Ap, t=10mS. Housing: TO-3PF (SOT399, 2-16E3A)