Standard and Rectifier Diodes

Semiconductor material: silicon. Forward current (AV): 8A. Pd (Power Dissipation, Max): 14W. Assembly/installation: surface-mounted component (SMD). Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). VRRM: 600V. Note: Ultrafast. Note: Ifsm--60Aps

Cj: 10pF. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 18 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Forward current (AV): 8A. IFSM: 60A. Marking on the case: HFA08TB60. Equivalents: 39.2k Ohms. Pd (Power Dissipation, Max): 36W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.4V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 50. Spec info: IFRM 24A

Semiconductor material: silicon. Forward current (AV): 8A. Pd (Power Dissipation, Max): 36W. Assembly/installation: surface-mounted component (SMD). Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263 ( D2PAK ). VRRM: 600V. Note: Ultrafast. Note: Ifsm 60Aps

Cj: 25pF. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 42 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Forward current (AV): 15A. IFSM: 50A. MRI (max): 400uA. MRI (min): 1uA. Marking on the case: HFA15TB60. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-2. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 50. Spec info: Trr 19ns, (IF=1A)

Cj: 55pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 23 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. Forward current (AV): 25A. IFSM: 225A. MRI (max): 600uA. MRI (min): 1.5uA. Equivalents: VS-HFA25TB60-M3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--225Ap

Cj: 25pF. Conditioning: plastic tube. Dielectric structure: common cathode. Trr Diode (Min.): 19 ns. Semiconductor material: silicon. Function: Ultra Fast Soft Recovery Diode. Forward current (AV): 30A. IFSM: 150A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AD. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 2V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Conditioning unit: 25. Spec info: Ifsm 150Ap, t=8.33ms

Quantity per case: 1. Semiconductor material: silicon. Forward current (AV): 6A. Note: D30. Assembly/installation: PCB through-hole mounting. VRRM: 800V. Note: M4 thread

RoHS: yes. Component family: Small-signal diode. Surface mount (SMD). Housing: PCB soldering (SMD). Housing: SOD80C (MiniMELF). Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 0.15A. Ifsm [A]: 2A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 25nA..50uA. Switching speed (regeneration time) tr [sec.]: 4 ns. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +200°C. Forward voltage Vfmax (V): 1V @ 10mA. Housing (JEDEC standard): 0.5W

Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High Speed ​​Switching Rectifiers. Forward current (AV): 0.2A. IFSM: 2A. MRI (max): 50uA. MRI (min): 25nA. Number of terminals: 2. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80 ( 3.4x1.6mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.62V. VRRM: 100V. Spec info: IFSM--2Ap (tp=1us)

Semiconductor material: silicon. Forward current (AV): 1A. Note: SAMSUNG. VRRM: 600V

Double: Double. Semiconductor material: silicon. Forward current (AV): 0.1A. VRRM: 80V. Note: dual silicon diode

Housing: SOD123. Diode type: schottky. Diode Configuration: independent. Forward Voltage (Max): 0.43V / 0.5A. Mounting Type: SMD. VRRM: 30V. Average Rectified Current per Diode: 0.5A. Reverse Leakage Current: 130uA / 30V. Product series: MBRB. MSL: 1

RoHS: yes. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 10A. IFSM: 150A. MRI (max): 6mA. MRI (min): 0.1mA. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220A-2P. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.71V. VRRM: 100V

Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Forward current (AV): 10A. IFSM: 60.4k Ohms. MRI (max): 0.008mA. MRI (min): 8uA. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.78V. VRRM: 100V. Function: Dual Schottky Barrier Rectifier Diode. Spec info: Ifsm 120A (t=8.3ms)

Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Forward current (AV): 10A. IFSM: 60.4k Ohms. MRI (max): 0.008mA. MRI (min): 8uA. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.88V. Forward voltage Vf (min): 0.78V. VRRM: 150V. Function: Dual Schottky Barrier Rectifier Diode. Spec info: Ifsm 120A (t=8.3ms)

Semiconductor material: Sb. Forward current (AV): 10A. Note: Schottky rectifier diode. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-2P. VRRM: 200V

Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Forward current (AV): 10A. IFSM: 60.4k Ohms. MRI (max): 0.2mA. MRI (min): 0.2mA. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC-3P. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.99V. Forward voltage Vf (min): 0.87V. VRRM: 200V. Function: Dual Schottky Barrier Rectifier Diode. Spec info: Ifsm 120A (t=8.3ms)

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 10A. IFSM: 150A. MRI (max): 6mA. MRI (min): 0.1mA. Marking on the case: B1060. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.7V. VRRM: 60V

Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: diode for switching power supply, double, Schottky. Forward current (AV): 7.5A. IFSM: 75A. MRI (max): 15mA. MRI (min): 0.1mA. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.84V. Forward voltage Vf (min): 0.57V. VRRM: 45V. Spec info: total 15A (150Ap t=8.3ms)

Close voltage (repetitive) Vrrm [V]: 60V. Leakage current on closing Ir [A]: 1mA..50mA. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Double: Double. Semiconductor material: Sb. Forward current (AV): 7.5A. Note: diode for switching power supply. Note: 15A/150App. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 60V

Cj: 500pF. Semiconductor material: Sb. Function: 'Barrier Rectifiers'. Forward current (AV): 16A. IFSM: 150A. Number of terminals: 3. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.63V. Forward voltage Vf (min): 0.57V. VRRM: 45V. Spec info: Ifsm 150App/8.3ms

Cj: 500pF. Semiconductor material: Sb. Forward current (AV): 16A. IFSM: 150A. Note: 'Barrier Rectifiers'. MRI (max): 10mA. MRI (min): 0.5mA. Number of terminals: 2. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.65V. VRRM: 60V. Spec info: Ifsm 150App/8.3ms

Cj: 400pF. Semiconductor material: Sb. Function: 'Barrier Rectifiers'. Forward current (AV): 16A. IFSM: 150A. Number of terminals: 3. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.65V. VRRM: 60V. Spec info: Ifsm 150App/8.3ms

Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 20A. IFSM: 150A. Marking on the case: B20100G. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.75V. VRRM: 100V. Spec info: Ifsm 150App/60Hz

Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Forward current (AV): 20A. IFSM: 150A. MRI (max): 20mA. MRI (min): 0.1mA. Marking on the case: B20100G. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.75V. VRRM: 100V. Spec info: Ifsm 150App/60Hz