Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.42$ | 0.42$ |
10 - 24 | 0.40$ | 0.40$ |
25 - 49 | 0.39$ | 0.39$ |
50 - 99 | 0.38$ | 0.38$ |
100 - 249 | 0.34$ | 0.34$ |
250 - 499 | 0.33$ | 0.33$ |
500 - 2609 | 0.32$ | 0.32$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.42$ | 0.42$ |
10 - 24 | 0.40$ | 0.40$ |
25 - 49 | 0.39$ | 0.39$ |
50 - 99 | 0.38$ | 0.38$ |
100 - 249 | 0.34$ | 0.34$ |
250 - 499 | 0.33$ | 0.33$ |
500 - 2609 | 0.32$ | 0.32$ |
FR607. Forward current (AV): 6A. IFSM: 200A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x7.2mm ) ( R-6 ). VRRM: 1000V. Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--200Ap/8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. Original product from manufacturer Taiwan Semiconductor. Quantity in stock updated on 01/07/2025, 10:25.
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