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Semiconductors Diodes Standard and Rectifier Diodes

FR607

FR607
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.42$ 0.42$
10 - 24 0.40$ 0.40$
25 - 49 0.38$ 0.38$
50 - 99 0.36$ 0.36$
100 - 249 0.32$ 0.32$
250 - 499 0.31$ 0.31$
500 - 3025 0.30$ 0.30$
Quantity U.P
1 - 9 0.42$ 0.42$
10 - 24 0.40$ 0.40$
25 - 49 0.38$ 0.38$
50 - 99 0.36$ 0.36$
100 - 249 0.32$ 0.32$
250 - 499 0.31$ 0.31$
500 - 3025 0.30$ 0.30$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 3025
Set of 1

FR607. Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 200A. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.1x7.2mm ) ( R-6 ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 1000V. Spec info: IFSM--200Ap/8.3mS. Quantity in stock updated on 25/12/2024, 06:25.

Technical documentation

Equivalent products :

Quantity in stock : 126
HER608

HER608

Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV...
HER608
Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 6A. IFSM: 150A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 (8.8x7mm). Tr: 75 ns. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: 150Ap/8.3ms
HER608
Cj: 65pF. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 6A. IFSM: 150A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 (8.8x7mm). Tr: 75 ns. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.7V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Spec info: 150Ap/8.3ms
Set of 1
0.63$ VAT incl.
(0.63$ excl. VAT)
0.63$

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Quantity in stock : 24551
1N5408

1N5408

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silico...
1N5408
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1N5408
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1N5349B

1N5349B

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BY255

BY255

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BY255
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BY255
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Quantity in stock : 241
SB3200

SB3200

Cj: 175pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Fu...
SB3200
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SB3200
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0.96$ VAT incl.
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0.96$
Quantity in stock : 521
P600K

P600K

Cj: 150pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Sem...
P600K
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P600K
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1N4007

1N4007

VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor mate...
1N4007
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Quantity in stock : 4282
ZY12

ZY12

Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Pd (Power Dissipation, Max): 2...
ZY12
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0.24$ VAT incl.
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Quantity in stock : 995
1N5399

1N5399

Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV)...
1N5399
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1N5399
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0.0619$
Quantity in stock : 3025
FR607

FR607

Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semi...
FR607
[LONGDESCRIPTION]
FR607
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.42$ VAT incl.
(0.42$ excl. VAT)
0.42$

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