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FR103

FR103
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.21$ 0.21$
10 - 24 0.20$ 0.20$
25 - 49 0.19$ 0.19$
50 - 99 0.18$ 0.18$
100 - 106 0.17$ 0.17$
Quantity U.P
1 - 9 0.21$ 0.21$
10 - 24 0.20$ 0.20$
25 - 49 0.19$ 0.19$
50 - 99 0.18$ 0.18$
100 - 106 0.17$ 0.17$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 106
Set of 1

FR103. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: 'Fast Recovery Rectifiers'. Forward current (AV): 1A. IFSM: 30A. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. VRRM: 200V. Spec info: 30App/8.3ms. Quantity in stock updated on 24/12/2024, 17:25.

Equivalent products :

Quantity in stock : 9336
1N4937

1N4937

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
1N4937
RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: Fast Switching for High Efficiency. Forward current (AV): 1A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Spec info: IFSM--30Ap t=8.3mS
1N4937
RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: Fast Switching for High Efficiency. Forward current (AV): 1A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Spec info: IFSM--30Ap t=8.3mS
Set of 10
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 494
1N4935

1N4935

Cj: 15pF. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching for Hi...
1N4935
Cj: 15pF. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching for High Efficiency. Forward current (AV): 1A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. RoHS: yes. Housing: DO-41. Housing (according to data sheet): DO41. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. VRRM: 200V. Spec info: 30App/8.3ms
1N4935
Cj: 15pF. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching for High Efficiency. Forward current (AV): 1A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. RoHS: yes. Housing: DO-41. Housing (according to data sheet): DO41. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. VRRM: 200V. Spec info: 30App/8.3ms
Set of 10
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$

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VRRM: 100V. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 5uA..50uA....
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1N5822

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BOX-M270-200-08

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1N4007

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30DF2

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Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward ...
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Quantity in stock : 198
SB1100

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PVR14D391

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1N5408

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TLP521-2

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