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SPB80N04S2-H4

SPB80N04S2-H4
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Quantity excl. VAT VAT incl.
1 - 4 1.84$ 1.84$
5 - 9 1.75$ 1.75$
10 - 24 1.66$ 1.66$
25 - 49 1.56$ 1.56$
50 - 58 1.53$ 1.53$
Quantity U.P
1 - 4 1.84$ 1.84$
5 - 9 1.75$ 1.75$
10 - 24 1.66$ 1.66$
25 - 49 1.56$ 1.56$
50 - 58 1.53$ 1.53$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 58
Set of 1

SPB80N04S2-H4. C(in): 4480pF. Cost): 1580pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 195 ns. Type of transistor: MOSFET. Function: 'Enhancement mode'. Id(imp): 320A. ID (T=25°C): 80A. Idss (max): 1uA. IDss (min): 0.01uA. Marking on the case: 2N04H4. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 3.4M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 46 ns. Td(on): 14 ns. Technology: power MOSFET transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 26/12/2024, 12:25.

Equivalent products :

Quantity in stock : 293
STB120N4F6

STB120N4F6

C(in): 3850pF. Cost): 650pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min....
STB120N4F6
C(in): 3850pF. Cost): 650pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 120N4F6. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 3.5m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: STripFET™ VI Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Function: Switching applications, Automotive. G-S Protection: no
STB120N4F6
C(in): 3850pF. Cost): 650pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Id(imp): 320A. ID (T=100°C): 80A. ID (T=25°C): 80A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 120N4F6. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 3.5m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: STripFET™ VI Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Function: Switching applications, Automotive. G-S Protection: no
Set of 1
2.95$ VAT incl.
(2.95$ excl. VAT)
2.95$

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