Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.84$ | 1.84$ |
5 - 9 | 1.75$ | 1.75$ |
10 - 24 | 1.66$ | 1.66$ |
25 - 49 | 1.56$ | 1.56$ |
50 - 58 | 1.53$ | 1.53$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.84$ | 1.84$ |
5 - 9 | 1.75$ | 1.75$ |
10 - 24 | 1.66$ | 1.66$ |
25 - 49 | 1.56$ | 1.56$ |
50 - 58 | 1.53$ | 1.53$ |
SPB80N04S2-H4. C(in): 4480pF. Cost): 1580pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 195 ns. Type of transistor: MOSFET. Function: 'Enhancement mode'. Id(imp): 320A. ID (T=25°C): 80A. Idss (max): 1uA. IDss (min): 0.01uA. Marking on the case: 2N04H4. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 3.4M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 46 ns. Td(on): 14 ns. Technology: power MOSFET transistor. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 40V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 26/12/2024, 12:25.
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