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Electronic components and equipment, for businesses and individuals

IRLR7843

IRLR7843
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.59$ 1.59$
5 - 9 1.51$ 1.51$
10 - 24 1.43$ 1.43$
25 - 49 1.35$ 1.35$
50 - 99 1.32$ 1.32$
100 - 249 1.29$ 1.29$
250 - 1618 1.23$ 1.23$
Quantity U.P
1 - 4 1.59$ 1.59$
5 - 9 1.51$ 1.51$
10 - 24 1.43$ 1.43$
25 - 49 1.35$ 1.35$
50 - 99 1.32$ 1.32$
100 - 249 1.29$ 1.29$
250 - 1618 1.23$ 1.23$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1618
Set of 1

IRLR7843. C(in): 4380pF. Cost): 940pF. Channel type: N. Conditioning: roll. Conditioning unit: 2000. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 39 ns. Type of transistor: MOSFET. Id(imp): 620A. ID (T=100°C): 113A. ID (T=25°C): 161A. Idss (max): 150uA. IDss (min): 1uA. Marking on the case: LR7843. Number of terminals: 2. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 2.6m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 34 ns. Td(on): 25 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.3V. Vgs(th) min.: 1.5V. Function: Very Low RDS(on) at 4.5V VGS, Ultra-Low Gate Impedance. G-S Protection: no. Quantity in stock updated on 27/12/2024, 02:25.

Equivalent products :

Quantity in stock : 74
IRLR8743

IRLR8743

C(in): 4880pF. Cost): 950pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 18 ns. Type of...
IRLR8743
C(in): 4880pF. Cost): 950pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 18 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 640A. ID (T=100°C): 113A. ID (T=25°C): 160A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 135W. On-resistance Rds On: 2.4M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Drain-source protection : yes. G-S Protection: no
IRLR8743
C(in): 4880pF. Cost): 950pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 18 ns. Type of transistor: MOSFET. Function: Gate control by logic level. Id(imp): 640A. ID (T=100°C): 113A. ID (T=25°C): 160A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 135W. On-resistance Rds On: 2.4M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 19 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.35V. Vgs(th) min.: 1.35V. Drain-source protection : yes. G-S Protection: no
Set of 1
2.39$ VAT incl.
(2.39$ excl. VAT)
2.39$

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