PNP bipolar transistors

NPN-Transistor, 0.15A, TO-92, TO-92, 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: 10. BE diode: no. BE resistor: 10. Cost): 3.7pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: SWITCHING APPLICATION. Max hFE gain: 240. Minimum hFE gain: 120. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V

NPN-Transistor, 1.5A, 150V. Collector current: 1.5A. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: insulated package transistor. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP

NPN-Transistor, 1.5A, SOT-89, SOT-89, 30 v. Collector current: 1.5A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 30 v. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: general purpose. Max hFE gain: 320. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar PNP Transistor'. Type of transistor: PNP. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3P ( H ) IS, 120V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3P ( H ) IS. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 280pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: High Power Audio Amplifier. Max hFE gain: 160. Minimum hFE gain: 55. Marking on the case: B778. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) KTD998. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V

ROHS: Yes. Housing: TO3. Power: 200W. Assembly/installation: THT. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 120V. Collector current Ic [A]: 30A

NPN-Transistor, 30A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 30A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 4 MHz. Function: hFE 1000 (IC=20Adc, VCE=5Vdc). Minimum hFE gain: 1000. Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJ11016. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN-Transistor, 50A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 120V. Collector current: 50A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 120V. Cost): 300pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 1000 (IC=25Adc, VCE=5Vdc, RBE=1K). Max hFE gain: 18000. Minimum hFE gain: 1000. Ic(pulse): 100A. Pd (Power Dissipation, Max): 300W. RoHS: yes. Spec info: complementary transistor (pair) MJ11032. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 120V, 50A. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 50A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ11033G. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C

NPN-Transistor, 20A, TO-3 ( TO-204 ), TO-3, 140V. Collector current: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 140V. BE diode: no. BE resistor: 70. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: Power Transistor. Production date: 2015/08. Max hFE gain: 150. Minimum hFE gain: 25. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ15003. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 15A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 360pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Pd (Power Dissipation, Max): 180W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 200V

NPN-Transistor, 15A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Max hFE gain: 70. Minimum hFE gain: 10. Number of terminals: 2. Pd (Power Dissipation, Max): 180W. RoHS: yes. Spec info: complementary transistor (pair) MJ15015. Assembly/installation: PCB through-hole mounting. Tf(max): 6us. Tf(min): 4us. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 200V. Saturation voltage VCE(sat): 1.1V. Vebo: 7V

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 120V, 15A. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15016G. Cutoff frequency ft [MHz]: 18 MHz. Maximum dissipation Ptot [W]: 180W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3, 200V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 200V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15022. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 350V

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3, 200V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 200V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ15022. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 350V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3, 250V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 280pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ15024. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 250V, 16A. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 16A. RoHS: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15025G. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 250V, 16A. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 16A. RoHS: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ21193G. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3 ( TO-204AA ), 250V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 4pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ21196. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V

NPN-Transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. BE diode: no. Cost): 4pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Switching and Amplifier Applications. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Pd (Power Dissipation, Max): 115W. Spec info: complementary transistor (pair) 2N3055. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Vebo: 7V

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 60V, 15A. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ2955G. Cutoff frequency ft [MHz]: 2.5 MHz. Maximum dissipation Ptot [W]: 115W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN-Transistor, PCB soldering (SMD), D-PAK, TO-252, 80V, 8A. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J45H11. Cutoff frequency ft [MHz]: 90 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 8A, TO-220, TO-220, 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) MJE15031. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 8A, TO-220, TO-220AB, 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) MJE15030G. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20

NPN-Transistor, PCB soldering, TO-220, TO-220, 250V, 8A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE15033G. Cutoff frequency ft [MHz]: 30 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 100. Minimum hFE gain: 10. Ic(pulse): 8A. Note: complementary transistor (pair) MJE15034G. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: hFE=100 (Min) @ IC=0.5Adc. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V