PNP bipolar transistors

NPN-Transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 100. Minimum hFE gain: 10. Ic(pulse): 8A. Note: complementary transistor (pair) MJE15034G. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: hFE=100 (Min) @ IC=0.5Adc. BE diode: no. CE diode: no

NPN-Transistor, 5A, TO-225, 40V, TO-126 (TO-225, SOT-32). Collector current: 5A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. Housing: TO-126 (TO-225, SOT-32). Cost): 120pF. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V. Spec info: complementary transistor (pair) MJE200. BE diode: no. CE diode: no

NPN-Transistor, -100V, -4A, TO-126, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Housing: TO-126. Collector current: 4A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Housing: TO-126 (TO-225, SOT-32). Type of transistor: Power Transistor. Polarity: PNP. Power: 15W. Max frequency: 40 MHz. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Spec info: complementary transistor (pair) MJE243

NPN-Transistor, TO-220, 10A, TO-220AB, 60V. Housing: TO-220. Collector current: 10A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. Resistor B: Power Transistor. BE resistor: -70V. C(in): -10A. Cost): 90W. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: NF-L. Max hFE gain: 70. Minimum hFE gain: 20. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no

NPN-Transistor, 10A, TO-220, TO-220AB, 60V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: for Hi-fi audio amplifiers and switching regulators. Max hFE gain: 100. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial-Base'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 70V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 8V. Vebo: 5V. Spec info: complementary transistor (pair) MJE3055T. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-220, TO-220, 60V, 10A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE2955TG. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, 300V, 500mA, -300V, -0.5A, TO-126, TO-126, 300V, TO-126 (TO-225, SOT-32). Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Collector-Emitter Voltage VCEO: -300V. Collector current: -0.5A. Housing: TO-126. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). Number of terminals: 3. Manufacturer's marking: MJE350. Maximum dissipation Ptot [W]: 20W. Type of transistor: Power Transistor. Polarity: PNP. Power: 20.8W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 240. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340

NPN-Transistor, 0.5A, TO-225, 300V, TO-126 (TO-225, SOT-32). Collector current: 0.5A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. BE diode: no. CE diode: no

NPN-Transistor, 0.5A, TO-126F, TO-225, 300V. Collector current: 0.5A. Housing: TO-126F. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. BE diode: no. CE diode: no

NPN-Transistor, 300V, 500mA, -300V, -0.5A, TO-126. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Collector-Emitter Voltage VCEO: -300V. Collector current: -0.5A. Housing: TO-126. Manufacturer's marking: MJE350G. Maximum dissipation Ptot [W]: 20W. Type of transistor: Power Transistor. Polarity: PNP. Power: 20W. Max frequency: 10MHz. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 8A, 400V. Collector current: 8A. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 80W. Type of transistor: PNP. Vcbo: 450V. BE diode: no. CE diode: yes

NPN-Transistor, PCB soldering, TO-220, TO-220, 400V, 8A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 8A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE5852G. Maximum dissipation Ptot [W]: 80W. Component family: high voltage PNP transistor. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, -80V, -4A, TO-126. Collector-Emitter Voltage VCEO: -80V. Collector current: -4A. Housing: TO-126. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Power: 40W. Max frequency: 1MHz. DC Collector/Base Gain hFE min.: 750

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no

NPN-Transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC =8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V. Spec info: complementary transistor (pair) MJL21194. BE diode: no. CE diode: no

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 350V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 350V. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Max hFE gain: 250. Minimum hFE gain: 50. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Bipolar Transistor. Type of transistor: PNP. Operating temperature: -60...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Function: Power audio, Low Harmonic Distortion. Spec info: complementary transistor (pair) MJL4281A. BE diode: no. CE diode: no

NPN-Transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201446. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. Technology: Power Bipolar Transistor. Spec info: complementary transistor (pair) MJW3281A. BE diode: no. CE diode: no

NPN-Transistor, 16A, TO-247, TO-247, 250V. Collector current: 16A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 250V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Production date: 2015/04. Max hFE gain: 80. Minimum hFE gain: 20. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) MJW21196. BE diode: no. CE diode: no

ROHS: Yes. Housing: SOT23. Frequency: 200MHz. Assembly/installation: SMD. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 60V. Collector current Ic [A]: 0.6A. Gain hfe: 50...300. Power: 0.25W

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 60V, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 800mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2F. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 40V, 200mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 200mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2A. Cutoff frequency ft [MHz]: 250 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Marking on the case: 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. Assembly/installation: surface-mounted component (SMD). Tf(max): 75 ns. Tf(min): 35 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V. Spec info: SMD 2A

NPN-Transistor, PCB soldering (SMD), SOT-23, 40V, 600mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 600mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2T. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Marking on the case: 2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 150V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 500mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2L. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 60V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 500mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2GM. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor