PNP bipolar transistors

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), SOT-93, 100V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: hFE 750 (@3V, 6A). Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BDW83C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, PCB soldering, SOT-93, SOT-93, 120V, 15A. Housing: PCB soldering. Housing: SOT-93. Housing (JEDEC standard): SOT-93. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW84D. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 120V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: hFE 750 (@3V, 6A). Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BDW83D. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 100V, 12A, TO-220, TO-220AB, 100V. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: PNP Darlington Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW94C. Cutoff frequency ft [MHz]: complementary transistor (pair) BDW93C. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V

NPN-Transistor, 12A, TO-220FP, TO-220F, 100V. Collector current: 12A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: complementary transistor (pair) BDW93CF. Max hFE gain: 20000. Minimum hFE gain: 100. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. RoHS: yes. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V

NPN-Transistor, 10A, TO-220, TO-220AB, 100V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Resistor B: 10k Ohms. BE diode: no. BE resistor: 150 Ohms. C(in): yes. Cost): -100V. CE diode: yes. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: 10k Ohms (R1), 150 Ohms (R2). Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) BDX33C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V

NPN-Transistor, PCB soldering, TO-220, TO-220, 100V, 10A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDX34CG. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 8A, TO-220, TO-220AB, 50V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 50V. Resistor B: Darlington Power Transistor. BE diode: no. BE resistor: Darlington transistor. C(in): -100V. Cost): -8A. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: audio amplifier. Production date: 2014/32. Minimum hFE gain: 750. Ic(pulse): 12A. Note: complementary transistor (pair) BDX53C. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Complementary power Darlington transistors. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, 8A, TO-220, 160V. Collector current: 8A. Housing: TO-220. Collector/emitter voltage Vceo: 160V. BE diode: no. BE resistor: R1 typ. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: Complementary power Darlington transistors. Minimum hFE gain: 750. Ic(pulse): 12A. Pd (Power Dissipation, Max): 60W. Spec info: complementary transistor (pair) BDX53F. Type of transistor: PNP. Vcbo: 160V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Function: hFE 1000. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) BDX67C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Function: hFE 1000. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) BDX67C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 4A, 50V. Collector current: 4A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 36W. Type of transistor: PNP

NPN-Transistor. Quantity per case: 1

NPN-Transistor, 25mA, TO-92, TO-92, 30 v. Collector current: 25mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 450 MHz. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Ic(pulse): 100mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Spec info: complementary transistor (pair) BF420. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V

NPN-Transistor, 0.05A, TO-92, TO-92, 250V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 250V. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Ic(pulse): 100A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Spec info: complementary transistor (pair) BF422. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 40V, 25mA, TO-92 ( SOT-54 ), 40V. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 25mA. Housing (according to data sheet): TO-92 ( SOT-54 ). Collector/emitter voltage Vceo: 40V. RoHS: no. Component family: NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF450. Cutoff frequency ft [MHz]: 350 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Spec info: feedback capacitance--0.45pF. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 40V. Vebo: 4 v

NPN-Transistor, 25mA, TO-92, TO-92, 40V. Collector current: 25mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: HF and IF stages in radio receivers. Max hFE gain: 90. Minimum hFE gain: 30. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 40V. Vebo: 4 v

NPN-Transistor, 0.03A, TO-126 (TO-225, SOT-32), TO-126, 300V. Collector current: 0.03A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Pd (Power Dissipation, Max): 2W. Spec info: complementary transistor (pair) BF471. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 50mA, 30 v. Collector current: 50mA. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: PNP

NPN-Transistor, 50mA, 30 v. Collector current: 50mA. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: VHF/UHF-V. Type of transistor: PNP

NPN-Transistor, -250V, -0.5A, TO-92. Collector-Emitter Voltage VCEO: -250V. Collector current: -0.5A. Housing: TO-92. Type of transistor: Power Transistor. Polarity: PNP. Power: 0.8W

NPN-Transistor, 0.5A, TO-92, TO-92, 350V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Max hFE gain: 40. Minimum hFE gain: 25. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 350V. Maximum saturation voltage VCE(sat): 2V. Vebo: 6V

NPN-Transistor, 30mA, TO-92, TO-92, 40V. Collector current: 30mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 550 MHz. Function: VHF-V. Minimum hFE gain: 25. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 35V. Vebo: 4 v

NPN-Transistor, TO-92, TO-92. Housing: TO-92. Housing (according to data sheet): TO-92. Quantity per case: 1. Assembly/installation: PCB through-hole mounting