PNP bipolar transistors

NPN-Transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 60V. Collector current: 0.8A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: hFE 50...300. Pd (Power Dissipation, Max): 0.35W. Spec info: screen printing/CMS code T8. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 60V

NPN-Transistor. CE diode: yes. Quantity per case: 1. Function: VHR758 EV

NPN-Transistor, 4A, TO-220, TO-220, 50V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) CSD1133. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 70V

NPN-Transistor, 10A, TO-220, TO-220AB, 80V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 60. Minimum hFE gain: 40. Ic(pulse): 20A. Equivalents: Fairchild--D45H11TU, KSE45H11TU, ON Semi. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: pair D44H11. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 100 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220, TO-220, 80V, 10A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D45H11G. Cutoff frequency ft [MHz]: 40 MHz. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 10A, TO-220, TO-220AB, 30 v. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. Minimum hFE gain: 70. Ic(pulse): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: no. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 30 v. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220, TO-220, 60V, 10A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D45H8G. Cutoff frequency ft [MHz]: 40 MHz. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 50mA, SOT-416 ( 1.6x0.8mm ), 50V. Collector current: 50mA. Housing (according to data sheet): SOT-416 ( 1.6x0.8mm ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Ic(pulse): 100mA. Marking on the case: 14. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: screen printing/SMD code 14. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 50V

NPN-Transistor, 50mA, SOT-23 ( TO-236 ), SOT-23 ( 2.9x1.6mm ), 50V. Collector current: 50mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( 2.9x1.6mm ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Digital Transistor (Bias Resistor Built-in). Ic(pulse): 100mA. Marking on the case: 14. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Spec info: screen printing/SMD code 14. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 50V

NPN-Transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Digital transistors (built-in resistors). Marking on the case: 15. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.2W. RoHS: yes. Spec info: screen printing/SMD code 15. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, 0.1A, SC-72, SC-72 ( D143 ), 50V. Collector current: 0.1A. Housing: SC-72. Housing (according to data sheet): SC-72 ( D143 ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: PNP

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Resistor B: 4.7k Ohms. BE diode: no. BE resistor: 47k Ohms. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: PNP resistor-equipped transistor. Minimum hFE gain: 100. Ic(pulse): 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: screen printing/SMD code 19. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 10V

NPN-Transistor, 1.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 1.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 190 MHz. Function: Switching Transistor. Max hFE gain: 480. Minimum hFE gain: 60. Ic(pulse): 4A. Note: complementary transistor (pair) FMMT619. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: screen printing/SMD code 720. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN-Transistor, 2A, SANYO--PCP4, 25V. Collector current: 2A. Housing (according to data sheet): SANYO--PCP4. Collector/emitter voltage Vceo: 25V. Quantity per case: 1. Semiconductor material: silicon. Ic(pulse): 5A. Number of terminals: 7. RoHS: yes. Spec info: 2SB1121 and SB05-05CP integrated in one case. Assembly/installation: surface-mounted component (SMD). Technology: Epitaxial Planar Silicon Transistor, Composite Schottky Barrier Diode. Type of transistor: PNP. Vcbo: 30 v

NPN-Transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 65 MHz. Function: hFE 5000. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) FN1016. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 3A, PCP4, 15V. Collector current: 3A. Housing (according to data sheet): PCP4. Collector/emitter voltage Vceo: 15V. CE diode: yes. Quantity per case: 2. Semiconductor material: silicon. Max hFE gain: 280. Minimum hFE gain: 100. Number of terminals: 6. RoHS: yes. Spec info: Transistor + diode block. Assembly/installation: PCB through-hole mounting. Saturation voltage VCE(sat): 0.25V

NPN-Transistor, PCB soldering (SMD), SOT-223, 400V, 0.2A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 0.2A. RoHS: yes. Component family: high voltage PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT558. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-223, 30 v, 5.5A, SOT-223 ( TO-226 ), SOT-223, 30 v. Housing: PCB soldering (SMD). Housing: SOT-223. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 5.5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 30 v. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT949. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 3W. Spec info: Very low saturation voltage. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.35V. Vebo: 6V

NPN-Transistor. Quantity per case: 1

NPN-Transistor, 3A, 40V. Collector current: 3A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Note: hFE 100...400. Pd (Power Dissipation, Max): 0.4W. Spec info: TO-92. Type of transistor: PNP

NPN-Transistor, 3A, TO-126 (TO-225, SOT-32), TO-126, 30 v. Collector current: 3A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 160...320. Spec info: NON-insulated housing. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 40V

NPN-Transistor, 0.2A, TO-92, TO-92, 30 v. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.25W. Spec info: KSA642-O. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 0.15A, 60V. Collector current: 0.15A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Pd (Power Dissipation, Max): 0.25W. Type of transistor: PNP

NPN-Transistor, 2A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: 9mm. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: Samsung>> STB1277. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 30 v. Vebo: 5V

NPN-Transistor, 0.7A, 80V. Collector current: 0.7A. Collector/emitter voltage Vceo: 80V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF/S. Pd (Power Dissipation, Max): 1W. Spec info: 9mm height. Type of transistor: PNP