Quantity | excl. VAT | VAT incl. |
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1 - 4 | 2.40$ | 2.40$ |
5 - 9 | 2.28$ | 2.28$ |
10 - 18 | 2.21$ | 2.21$ |
Quantity | U.P | |
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1 - 4 | 2.40$ | 2.40$ |
5 - 9 | 2.28$ | 2.28$ |
10 - 18 | 2.21$ | 2.21$ |
NPN-Transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3P ( H ) IS, 120V - KTB778. NPN-Transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3P ( H ) IS, 120V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3P ( H ) IS. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 280pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: High Power Audio Amplifier. Max hFE gain: 160. Minimum hFE gain: 55. Marking on the case: B778. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) KTD998. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V. Original product from manufacturer Korea Electronics Semi.. Quantity in stock updated on 07/06/2025, 07:25.
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