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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 60V - BSR16

NPN-Transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 60V - BSR16
[TITLE]
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.26$ 1.26$
2 - 2 1.19$ 1.19$
3 - 4 1.13$ 1.13$
5 - 9 1.11$ 1.11$
10 - 24 1.07$ 1.07$
25 - 49 1.01$ 1.01$
50 - 240 0.85$ 0.85$
Quantity (Set of 10) U.P
1 - 1 1.26$ 1.26$
2 - 2 1.19$ 1.19$
3 - 4 1.13$ 1.13$
5 - 9 1.11$ 1.11$
10 - 24 1.07$ 1.07$
25 - 49 1.01$ 1.01$
50 - 240 0.85$ 0.85$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2399
Set of 10

NPN-Transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 60V - BSR16. NPN-Transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 60V. Collector current: 0.8A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: hFE 50...300. Pd (Power Dissipation, Max): 0.35W. Spec info: screen printing/CMS code T8. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 60V. Original product from manufacturer On Semiconductor. Quantity in stock updated on 26/07/2025, 13:25.

Technical documentation

Equivalent products :

Quantity in stock : 1035
MMBT2907ALT1G

MMBT2907ALT1G

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 60V. Collector current: 0.6A. Housing: SO...
MMBT2907ALT1G
NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 60V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 1.2A. Marking on the case: 2F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Spec info: SMD '2F'. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
MMBT2907ALT1G
NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 60V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 1.2A. Marking on the case: 2F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Spec info: SMD '2F'. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
Set of 10
0.58$ VAT incl.
(0.58$ excl. VAT)
0.58$

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