PNP bipolar transistors

NPN-Transistor, PCB soldering, TO-126, SOT-32, 80V, 1.5A, TO-126, 80V, TO-126 (TO-225, SOT-32). Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD140. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Cutoff frequency ft [MHz]: 250. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BD139

NPN-Transistor, PCB soldering, TO-126, SOT-32, 80V, 1.5A. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD140-10. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, TO-126, 80V, 1.5A, -80V, -1.5A, TO-126, 80V, TO-126 (TO-225, SOT-32). Housing: TO-126. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Collector-Emitter Voltage VCEO: -80V. Collector current: -1.5A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). Manufacturer's marking: BD140-16. Maximum dissipation Ptot [W]: 12.5W. Type of transistor: Power Transistor. Polarity: PNP. Power: 12.5W. Max frequency: 50MHz. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 250. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Spec info: complementary transistor (pair) BD139-16

NPN-Transistor, 1.5A, TO-126, 80V, TO-126 (TO-225, SOT-32). Collector current: 1.5A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 25. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55°C to +150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BD139. BE diode: no. CE diode: no

NPN-Transistor, 1.5A, 45V. Collector current: 1.5A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP

NPN-Transistor, 2A, TO-126, 80V, TO-126 (TO-225, SOT-32). Collector current: 2A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-126. Cost): SOT-32. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Audio, power linear and switching applications. Max hFE gain: 40. Minimum hFE gain: 25. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 0.6V. Vebo: 5V. Spec info: complementary transistor (pair) BD237. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-225, TO-225, 80V, 2A. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 2A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD238G. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, -80V, -2A, TO-126. Collector-Emitter Voltage VCEO: -80V. Collector current: -2A. Housing: TO-126. Type of transistor: Power Transistor. Polarity: PNP. Power: 25W. Max frequency: 3MHz

NPN-Transistor, 2A, TO-220, TO-220, 115V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 4A. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.7V. Vebo: 5V. Spec info: complementary transistor (pair) BD239C. BE diode: no. CE diode: no

NPN-Transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V. Spec info: complementary transistor (pair) BD241C. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 100V, 3A. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 3A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD242CG. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 100V, 6A, TO-220, TO-220, 100V. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD244C. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Cutoff frequency ft [MHz]: 15. Pd (Power Dissipation, Max): 65W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V. Spec info: complementary transistor (pair) BD243C

NPN-Transistor, TO-220, 6A, TO-220, 100V. Housing: TO-220. Collector current: 6A. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Resistor B: Power Transistor. BE resistor: -100V. C(in): -6A. Cost): 65W. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65°C...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V. Spec info: complementary transistor (pair) BD243C. BE diode: no. CE diode: no

NPN-Transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 115V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) BD245C. CE diode: yes

NPN-Transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 115V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) BD245C. CE diode: yes

NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-3P, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) BD249C. BE diode: no. CE diode: no

NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) BD249C. BE diode: no. CE diode: no

NPN-Transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) BD249C. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, SOT-93, SOT-93, 100V, 25A. Housing: PCB soldering. Housing: SOT-93. Housing (JEDEC standard): SOT-93. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 25A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD250C. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, PCB soldering, TO-126, SOT-32, 32V, 4A, TO-126, 32V, TO-126 (TO-225, SOT-32). Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 32V. Collector current Ic [A], max.: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 32V. Housing: TO-126 (TO-225, SOT-32). RoHS: no. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD438. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Type of transistor: PNP

NPN-Transistor, -45V, -4A, TO-126, 4A, TO-126, 45V, TO-126 (TO-225, SOT-32). Collector-Emitter Voltage VCEO: -45V. Collector current: -4A. Housing: TO-126. Collector current: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 45V. Housing: TO-126 (TO-225, SOT-32). Type of transistor: Power Transistor. Polarity: PNP. Power: 36W. Max frequency: 3MHz. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 130. Minimum hFE gain: 30. Ic(pulse): 7A. Number of terminals: 3. Pd (Power Dissipation, Max): 36W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 45V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V. Spec info: complementary transistor (pair) BD437

NPN-Transistor, -45V, -4A, TO-126 FULLPACK. Collector-Emitter Voltage VCEO: -45V. Collector current: -4A. Housing: TO-126 FULLPACK. Type of transistor: Power Transistor. Polarity: PNP. Power: 36W. Max frequency: 3MHz

NPN-Transistor, PCB soldering, TO-126, SOT-32, 60V, 4A. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 4A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD440. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, PCB soldering, TO-126, SOT-32, 80V, 4A, 4A, TO-126, 80V, TO-126 (TO-225, SOT-32). Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 4A. Collector current: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Housing: TO-126 (TO-225, SOT-32). RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD442. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor. Minimum hFE gain: 20. Ic(pulse): 7A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.8V. Spec info: complementary transistor (pair) BD441

NPN-Transistor, 4A, TO-126F, TO-126F, 80V. Collector current: 4A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: insulated-case. BE diode: no. CE diode: no