NPN-Transistor, 12A, TO-220, TO-220, 120V - BDT64C

NPN-Transistor, 12A, TO-220, TO-220, 120V - BDT64C. NPN-Transistor, 12A, TO-220, TO-220, 120V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. BE diode: yes. CE diode: yes. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 1500. Minimum hFE gain: 750. Ic(pulse): 20A. Note: 3k Ohms (R1), 45 Ohms (R2). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BDT65C. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Tf(max): 2.5us. Tf(min): 0.5us. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Vebo: 2.5V. Original product from manufacturer Philips Semiconductors. Quantity in stock updated on 07/06/2025, 15:25.