PNP bipolar transistors

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-264, 80V, 1A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP53-10. Cutoff frequency ft [MHz]: 120 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C. Component family: PNP power transistor

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-261, 80V, 1.5A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AH-10. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 80V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 80V. Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP 5316. Number of terminals: 3. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BCP56-16. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-261, 80V, 1A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AH. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-264, 80V, 1A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP56-10. Cutoff frequency ft [MHz]: 120 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C. Component family: PNP power transistor

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-261, 20V, 2A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 2A. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP69/25. Cutoff frequency ft [MHz]: 140 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-261, 20V, 2A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 2A. RoHS: no. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP69. Cutoff frequency ft [MHz]: 140 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 500mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Resistor B: 4.7k Ohms. BE resistor: 4.7k Ohms. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: PNP Silicon Digital Transistor. Minimum hFE gain: 50. Marking on the case: XUs. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 50V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 500mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: XHs. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 100mA, SOT-143, SOT-143, 30 v. Collector current: 100mA. Housing: SOT-143. Housing (according to data sheet): SOT-143. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. FT: 250 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Marking on the case: 3Ls. Number of terminals: 4. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP & PNP. Vcbo: 30 v. Function: PNP Silicon Dual Transistor. Spec info: screen printing/SMD code 3Ls. BE diode: no. CE diode: no

NPN-Transistor, 0.1A, 32V. Collector current: 0.1A. Collector/emitter voltage Vceo: 32V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 500. Minimum hFE gain: 250. Note: screen printing/SMD code C2. Marking on the case: C2. Pd (Power Dissipation, Max): 300mW. Type of transistor: PNP. Vcbo: 32V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Note: >120. Type of transistor: PNP

NPN-Transistor, PCB soldering (SMD), SOT-23, 45V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCW69R. Maximum dissipation Ptot [W]: 0.25W

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 45V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 500mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: T1. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 125V. Collector current: 0.8A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 125V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: PNP transistor. for AF and switching applications. Max hFE gain: 63. Minimum hFE gain: 25. Ic(pulse): 1A. Marking on the case: DKs. Pd (Power Dissipation, Max): 0.33W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...150°C. Vcbo: 125V. Maximum saturation voltage VCE(sat): 0.9V. Vebo: 5V. Spec info: complementary transistor (pair) BCX41. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 125V, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 125V. Collector current Ic [A], max.: 800mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: DKs. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 1A, SOT-89, SOT-89, 45V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-TR. Pd (Power Dissipation, Max): 1.3W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Spec info: screen printing/SMD code AA

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 45V, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 1A. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AD. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 60V, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 1A. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AM. Cutoff frequency ft [MHz]: 125 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

NPN-Transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: audio amplifiers. Max hFE gain: 250. Minimum hFE gain: 40. Ic(pulse): 1.5A. Marking on the case: AH. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: screen printing/SMD code AH

NPN-Transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: audio amplifiers. Max hFE gain: 160. Minimum hFE gain: 63. Ic(pulse): 1.5A. Note: screen printing/SMD code AK. Marking on the case: AK. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BCX56-16

NPN-Transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. RoHS: yes. Resistor B: yes. BE diode: PNP transistor. BE resistor: PCB soldering (SMD). C(in): SOT-89. Cost): TO-243. CE diode: surface-mounted component (SMD). Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: audio amplifiers. Max hFE gain: 250. Minimum hFE gain: 160. Ic(pulse): 1.5A. Note: screen printing/SMD code AL. Marking on the case: AL. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BCX56-16

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 80V, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AL. Cutoff frequency ft [MHz]: 125 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, 0.1A, 32V. Collector current: 0.1A. Collector/emitter voltage Vceo: 32V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: NF/S. Pd (Power Dissipation, Max): 0.35W. Type of transistor: PNP

NPN-Transistor, 1.5A, TO-126, 45V, TO-126 (TO-225, SOT-32). Collector current: 1.5A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 45V. Housing: TO-126 (TO-225, SOT-32). Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. BE diode: no. CE diode: no