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NPN-Transistor, -100V, -4A, TO-126 - BD682

NPN-Transistor, -100V, -4A, TO-126 - BD682
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Quantity excl. VAT VAT incl.
1 - 9 0.70$ 0.70$
10 - 24 0.67$ 0.67$
25 - 49 0.65$ 0.65$
50 - 52 0.63$ 0.63$
Quantity U.P
1 - 9 0.70$ 0.70$
10 - 24 0.67$ 0.67$
25 - 49 0.65$ 0.65$
50 - 52 0.63$ 0.63$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 52
Set of 1

NPN-Transistor, -100V, -4A, TO-126 - BD682. NPN-Transistor, -100V, -4A, TO-126. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Housing: TO-126. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Built-in diode: yes. Power: 40W. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 26/07/2025, 17:25.

Equivalent products :

Quantity in stock : 93
BD684

BD684

NPN-Transistor, 4A, 120V. Collector current: 4A. Collector/emitter voltage Vceo: 120V. Darlington tr...
BD684
NPN-Transistor, 4A, 120V. Collector current: 4A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Note: >750. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP
BD684
NPN-Transistor, 4A, 120V. Collector current: 4A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Note: >750. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP
Set of 1
0.92$ VAT incl.
(0.92$ excl. VAT)
0.92$

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