FQD30N06L

Quantity	excl. VAT	VAT incl.
1 - 4	1.71$	1.71$
5 - 9	1.62$	1.62$
10 - 24	1.54$	1.54$
25 - 26	1.45$	1.45$

Quantity	U.P
1 - 4	1.71$	1.71$
5 - 9	1.62$	1.62$
10 - 24	1.54$	1.54$
25 - 26	1.45$	1.45$

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Quantity in stock : 26

Set of 1

FQD30N06L. C(in): 800pF. Cost): 270pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 55 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Id(imp): 96A. ID (T=100°C): 15A. ID (T=25°C): 24A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: 30N06L. Pd (Power Dissipation, Max): 44W. On-resistance Rds On: 0.031 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 15 ns. Technology: DMOS, QFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Number of terminals: 2. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 26/12/2024, 05:25.

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Delivery in 2-3 days, with postal tracking!