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Semiconductors Transistors

FQD19N10L

FQD19N10L
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.80$ 1.80$
5 - 9 1.71$ 1.71$
10 - 24 1.62$ 1.62$
25 - 49 1.53$ 1.53$
50 - 95 1.49$ 1.49$
Quantity U.P
1 - 4 1.80$ 1.80$
5 - 9 1.71$ 1.71$
10 - 24 1.62$ 1.62$
25 - 49 1.53$ 1.53$
50 - 95 1.49$ 1.49$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 95
Set of 1

FQD19N10L. C(in): 670pF. Cost): 160pF. Channel type: N. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Id(imp): 62.4A. ID (T=100°C): 9.8A. ID (T=25°C): 15.6A. Idss (max): 10uA. IDss (min): 1uA. Equivalents: FQD19N10LTM. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.074 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 20 ns. Td(on): 14 ns. Technology: DMOS, QFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 45
IRLR3410

IRLR3410

C(in): 800pF. Cost): 160pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of...
IRLR3410
C(in): 800pF. Cost): 160pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Id(imp): 60A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.105 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no
IRLR3410
C(in): 800pF. Cost): 160pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Id(imp): 60A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.105 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Spec info: Gate control by logic level. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no
Set of 1
1.14$ VAT incl.
(1.14$ excl. VAT)
1.14$

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IRLR024N

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IRLR2905Z

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IRF7807Z

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IRFZ48N

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IRFZ24N

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HUF76121D3S

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C(in): 850pF. Cost): 465pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.)...
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