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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V - MMBT5551

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V - MMBT5551
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.42$ 0.42$
5 - 9 0.39$ 0.39$
10 - 24 0.37$ 0.37$
25 - 49 0.35$ 0.35$
50 - 99 0.33$ 0.33$
100 - 149 0.31$ 0.31$
150 - 1113 0.29$ 0.29$
Quantity (Set of 10) U.P
1 - 4 0.42$ 0.42$
5 - 9 0.39$ 0.39$
10 - 24 0.37$ 0.37$
25 - 49 0.35$ 0.35$
50 - 99 0.33$ 0.33$
100 - 149 0.31$ 0.31$
150 - 1113 0.29$ 0.29$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 11129
Set of 10

NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V - MMBT5551. NPN transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 160V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 160V. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 60. Marking on the case: G1. Equivalents: MMBT5551LT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Vebo: 6V. Spec info: screen printing/SMD code G1 (3S Fairchild). BE diode: no. CE diode: no. Quantity in stock updated on 19/04/2025, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 7394
2N5551

2N5551

NPN transistor, TO-92, 0.6A, TO-92, 160V. Housing: TO-92. Collector current: 0.6A. Housing (accordin...
2N5551
NPN transistor, TO-92, 0.6A, TO-92, 160V. Housing: TO-92. Collector current: 0.6A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 160V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: VIDEO amp.. Max hFE gain: 250. Minimum hFE gain: 80. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.2V. Vebo: 6V. BE diode: no. CE diode: no
2N5551
NPN transistor, TO-92, 0.6A, TO-92, 160V. Housing: TO-92. Collector current: 0.6A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 160V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: VIDEO amp.. Max hFE gain: 250. Minimum hFE gain: 80. Ic(pulse): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 180V. Saturation voltage VCE(sat): 0.15V. Maximum saturation voltage VCE(sat): 0.2V. Vebo: 6V. BE diode: no. CE diode: no
Set of 10
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$

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