Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.97$ | 0.97$ |
5 - 9 | 0.92$ | 0.92$ |
10 - 24 | 0.87$ | 0.87$ |
25 - 49 | 0.82$ | 0.82$ |
50 - 99 | 0.81$ | 0.81$ |
100 - 148 | 0.79$ | 0.79$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.97$ | 0.97$ |
5 - 9 | 0.92$ | 0.92$ |
10 - 24 | 0.87$ | 0.87$ |
25 - 49 | 0.82$ | 0.82$ |
50 - 99 | 0.81$ | 0.81$ |
100 - 148 | 0.79$ | 0.79$ |
MJE350-ONS. C(in): 7pF. Cost): 110pF. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Collector current: 0.5A. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Collector/emitter voltage Vceo: 300V. Vebo: 3V. Spec info: complementary transistor (pair) MJE340. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 01:25.
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