Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.97$ | 0.97$ |
5 - 9 | 0.92$ | 0.92$ |
10 - 24 | 0.89$ | 0.89$ |
25 - 49 | 0.87$ | 0.87$ |
50 - 99 | 0.85$ | 0.85$ |
100 - 140 | 0.82$ | 0.82$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.97$ | 0.97$ |
5 - 9 | 0.92$ | 0.92$ |
10 - 24 | 0.89$ | 0.89$ |
25 - 49 | 0.87$ | 0.87$ |
50 - 99 | 0.85$ | 0.85$ |
100 - 140 | 0.82$ | 0.82$ |
NPN-Transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-225, 300V - MJE350-ONS. NPN-Transistor, 0.5A, TO-126 (TO-225, SOT-32), TO-225, 300V. Collector current: 0.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. BE diode: no. C(in): 7pF. Cost): 110pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 240. Minimum hFE gain: 30. Equivalents: KSE350. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE340. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vebo: 3V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 21/05/2025, 08:25.
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