MMBT2907ALT1G

Quantity (Set of 10)	excl. VAT	VAT incl.
1 - 4	0.58$	0.58$
5 - 9	0.55$	0.55$
10 - 24	0.53$	0.53$
25 - 49	0.50$	0.50$
50 - 99	0.47$	0.47$
100 - 111	0.44$	0.44$

Quantity (Set of 10)	U.P
1 - 4	0.58$	0.58$
5 - 9	0.55$	0.55$
10 - 24	0.53$	0.53$
25 - 49	0.50$	0.50$
50 - 99	0.47$	0.47$
100 - 111	0.44$	0.44$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 1110

Set of 10

MMBT2907ALT1G. Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 0.6A. Ic(pulse): 1.2A. Marking on the case: 2F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: SMD '2F'. BE diode: no. CE diode: no. Quantity in stock updated on 11/01/2025, 07:25.

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Delivery in 2-3 days, with postal tracking!