NPN transistor, 7A, TO-3PF (SOT399), TO-3PF, 800V - KSC5386TU
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 9.25$ | 9.25$ |
| 2 - 2 | 8.79$ | 8.79$ |
| 3 - 4 | 8.61$ | 8.61$ |
| 5 - 9 | 8.33$ | 8.33$ |
| 10 - 19 | 8.14$ | 8.14$ |
| 20 - 29 | 7.87$ | 7.87$ |
| 30+ | 7.59$ | 7.59$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 9.25$ | 9.25$ |
| 2 - 2 | 8.79$ | 8.79$ |
| 3 - 4 | 8.61$ | 8.61$ |
| 5 - 9 | 8.33$ | 8.33$ |
| 10 - 19 | 8.14$ | 8.14$ |
| 20 - 29 | 7.87$ | 7.87$ |
| 30+ | 7.59$ | 7.59$ |
NPN transistor, 7A, TO-3PF (SOT399), TO-3PF, 800V - KSC5386TU. NPN transistor, 7A, TO-3PF (SOT399), TO-3PF, 800V. Collector current: 7A. Housing: TO-3PF (SOT399). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. BE diode: no. BE resistor: 10. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High Switching 0.1us. Max hFE gain: 22. Minimum hFE gain: 8. Ic(pulse): 16A. Marking on the case: C5386. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: VEBO 6V. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.2us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 4.2V. Vebo: 6V. Quantity in stock updated on 08/06/2025, 00:25.
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