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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 3A, TO-220, TO-220, 800V - KSC5027-O

NPN transistor, 3A, TO-220, TO-220, 800V - KSC5027-O
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.45$ 2.45$
5 - 9 2.33$ 2.33$
10 - 24 2.20$ 2.20$
25 - 49 2.08$ 2.08$
50 - 99 2.03$ 2.03$
100 - 201 1.98$ 1.98$
Quantity U.P
1 - 4 2.45$ 2.45$
5 - 9 2.33$ 2.33$
10 - 24 2.20$ 2.20$
25 - 49 2.08$ 2.08$
50 - 99 2.03$ 2.03$
100 - 201 1.98$ 1.98$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 201
Set of 1

NPN transistor, 3A, TO-220, TO-220, 800V - KSC5027-O. NPN transistor, 3A, TO-220, TO-220, 800V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 800V. Cost): 60pF. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: High Speed ​​Switching. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 10A. Marking on the case: KSC5027 (O). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Type of transistor: NPN. Operating temperature: 0...+150°C. Vcbo: 1100V. Maximum saturation voltage VCE(sat): 2V. BE diode: no. CE diode: no. Quantity in stock updated on 19/04/2025, 18:25.

Equivalent products :

Quantity in stock : 56
BUL216

BUL216

NPN transistor, 4A, TO-220, TO-220, 800V. Collector current: 4A. Housing: TO-220. Housing (according...
BUL216
NPN transistor, 4A, TO-220, TO-220, 800V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 6A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Assembly/installation: PCB through-hole mounting. Tf(max): 720 ns. Tf(min): 450 ns. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V. Function: high voltage fast switching, for switching power supplies. Quantity per case: 1. BE diode: no. CE diode: no
BUL216
NPN transistor, 4A, TO-220, TO-220, 800V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 800V. Semiconductor material: silicon. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 6A. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Assembly/installation: PCB through-hole mounting. Tf(max): 720 ns. Tf(min): 450 ns. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 1V. Maximum saturation voltage VCE(sat): 3V. Vebo: 9V. Function: high voltage fast switching, for switching power supplies. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
2.07$ VAT incl.
(2.07$ excl. VAT)
2.07$

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