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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 1.8A, 2.9A, 2.9A, 4 Ohms, TO-220, 600V - STP3NA60

N-channel transistor, 1.8A, 2.9A, 2.9A, 4 Ohms, TO-220, 600V - STP3NA60
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.47$ 1.47$
5 - 9 1.40$ 1.40$
10 - 24 1.32$ 1.32$
25 - 49 1.25$ 1.25$
50 - 61 1.22$ 1.22$
Quantity U.P
1 - 4 1.47$ 1.47$
5 - 9 1.40$ 1.40$
10 - 24 1.32$ 1.32$
25 - 49 1.25$ 1.25$
50 - 61 1.22$ 1.22$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 61
Set of 1

N-channel transistor, 1.8A, 2.9A, 2.9A, 4 Ohms, TO-220, 600V - STP3NA60. N-channel transistor, 1.8A, 2.9A, 2.9A, 4 Ohms, TO-220, 600V. ID (T=100°C): 1.8A. ID (T=25°C): 2.9A. Idss (max): 2.9A. On-resistance Rds On: 4 Ohms. Housing: TO-220. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS. Quantity in stock updated on 19/04/2025, 01:25.

Equivalent products :

Quantity in stock : 53
STP3NB60

STP3NB60

N-channel transistor, 2.1A, 3.3A, 50uA, 3.3 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.1A. ID (T=2...
STP3NB60
N-channel transistor, 2.1A, 3.3A, 50uA, 3.3 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 50uA. On-resistance Rds On: 3.3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 400pF. Cost): 57pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 13.2A. IDss (min): 1uA. Marking on the case: P3NB60. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Td(off): 11 ns. Td(on): 11 ns. Technology: PowerMESH™ MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no
STP3NB60
N-channel transistor, 2.1A, 3.3A, 50uA, 3.3 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 50uA. On-resistance Rds On: 3.3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 400pF. Cost): 57pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 13.2A. IDss (min): 1uA. Marking on the case: P3NB60. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Td(off): 11 ns. Td(on): 11 ns. Technology: PowerMESH™ MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no
Set of 1
1.49$ VAT incl.
(1.49$ excl. VAT)
1.49$

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