Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.49$ | 1.49$ |
5 - 9 | 1.42$ | 1.42$ |
10 - 24 | 1.34$ | 1.34$ |
25 - 49 | 1.27$ | 1.27$ |
50 - 54 | 1.24$ | 1.24$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.49$ | 1.49$ |
5 - 9 | 1.42$ | 1.42$ |
10 - 24 | 1.34$ | 1.34$ |
25 - 49 | 1.27$ | 1.27$ |
50 - 54 | 1.24$ | 1.24$ |
STP3NB60. C(in): 400pF. Cost): 57pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 13.2A. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P3NB60. Pd (Power Dissipation, Max): 80W. On-resistance Rds On: 3.3 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 11 ns. Td(on): 11 ns. Technology: PowerMESH™ MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 13:25.
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