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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V - IRF540

N-channel transistor, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V - IRF540
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.73$ 1.73$
5 - 9 1.65$ 1.65$
10 - 24 1.56$ 1.56$
25 - 49 1.47$ 1.47$
50 - 99 1.44$ 1.44$
100 - 110 1.40$ 1.40$
Quantity U.P
1 - 4 1.73$ 1.73$
5 - 9 1.65$ 1.65$
10 - 24 1.56$ 1.56$
25 - 49 1.47$ 1.47$
50 - 99 1.44$ 1.44$
100 - 110 1.40$ 1.40$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 110
Set of 1

N-channel transistor, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V - IRF540. N-channel transistor, 20A, 28A, 250uA, 0.077 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 20A. ID (T=25°C): 28A. Idss (max): 250uA. On-resistance Rds On: 0.077 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1700pF. Cost): 560pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: 1.3k Ohms. Id(imp): 110A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 326
IRF540N

IRF540N

N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T...
IRF540N
N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
IRF540N
N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
1.49$ VAT incl.
(1.49$ excl. VAT)
1.49$

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