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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 1.3A, 2.5A, 1mV, 3.6 Ohms, TO-220FP, TO-220FI-LS, 800V - 2SK2632LS

N-channel transistor, 1.3A, 2.5A, 1mV, 3.6 Ohms, TO-220FP, TO-220FI-LS, 800V - 2SK2632LS
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Quantity excl. VAT VAT incl.
1 - 4 4.19$ 4.19$
Quantity U.P
1 - 4 4.19$ 4.19$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 4
Set of 1

N-channel transistor, 1.3A, 2.5A, 1mV, 3.6 Ohms, TO-220FP, TO-220FI-LS, 800V - 2SK2632LS. N-channel transistor, 1.3A, 2.5A, 1mV, 3.6 Ohms, TO-220FP, TO-220FI-LS, 800V. ID (T=100°C): 1.3A. ID (T=25°C): 2.5A. Idss (max): 1mV. On-resistance Rds On: 3.6 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FI-LS. Voltage Vds(max): 800V. C(in): 550pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching Applications. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 15 ns. Technology: V-MOS (F). Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 5.5V. Gate/source voltage (off) min.: 3.5V. Drain-source protection : yes. Germanium diode: no. Quantity in stock updated on 14/04/2025, 22:25.

Technical documentation

Equivalent products :

Quantity in stock : 81
STP4NB80FP

STP4NB80FP

N-channel transistor, 2.4A, 4A, 50uA, 3 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 2.4A. ID (T=2...
STP4NB80FP
N-channel transistor, 2.4A, 4A, 50uA, 3 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 2.4A. ID (T=25°C): 4A. Idss (max): 50uA. On-resistance Rds On: 3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. C(in): 700pF. Cost): 95pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Id(imp): 16A. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 14 ns. Technology: PowerMESH MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. G-S Protection: no
STP4NB80FP
N-channel transistor, 2.4A, 4A, 50uA, 3 Ohms, TO-220FP, TO-220FP, 800V. ID (T=100°C): 2.4A. ID (T=25°C): 4A. Idss (max): 50uA. On-resistance Rds On: 3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 800V. C(in): 700pF. Cost): 95pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Id(imp): 16A. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 14 ns. Technology: PowerMESH MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. G-S Protection: no
Set of 1
2.07$ VAT incl.
(2.07$ excl. VAT)
2.07$

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