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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 6A, 200uA, 1.87 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V - 2SK2850

N-channel transistor, 6A, 200uA, 1.87 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V - 2SK2850
[TITLE]
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 10.34$ 10.34$
2 - 2 9.82$ 9.82$
3 - 4 9.61$ 9.61$
5 - 9 9.30$ 9.30$
10 - 19 9.10$ 9.10$
20 - 29 8.79$ 8.79$
30+ 8.48$ 8.48$
Quantity U.P
1 - 1 10.34$ 10.34$
2 - 2 9.82$ 9.82$
3 - 4 9.61$ 9.61$
5 - 9 9.30$ 9.30$
10 - 19 9.10$ 9.10$
20 - 29 8.79$ 8.79$
30+ 8.48$ 8.48$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 6A, 200uA, 1.87 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V - 2SK2850. N-channel transistor, 6A, 200uA, 1.87 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=25°C): 6A. Idss (max): 200uA. On-resistance Rds On: 1.87 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 900V. C(in): 950pF. Cost): 140pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 900ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. G-S Protection: no. Id(imp): 24A. IDss (min): 10uA. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 20 ns. Technology: TT-MOSV. Operating temperature: -...+150°. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V. Original product from manufacturer Fuji Electric. Quantity in stock updated on 04/06/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 78
STW7NK90Z

STW7NK90Z

N-channel transistor, 3.65A, 5.8A, 50uA, 1.56 Ohms, TO-247, TO-247, 900V. ID (T=100°C): 3.65A. ID (...
STW7NK90Z
N-channel transistor, 3.65A, 5.8A, 50uA, 1.56 Ohms, TO-247, TO-247, 900V. ID (T=100°C): 3.65A. ID (T=25°C): 5.8A. Idss (max): 50uA. On-resistance Rds On: 1.56 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 900V. C(in): 1350pF. Cost): 130pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 840 ns. Type of transistor: MOSFET. Function: protected with zener diode. G-S Protection: yes. Id(imp): 23.2A. IDss (min): 1uA. Marking on the case: W7NK90Z. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 17 ns. Technology: SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V
STW7NK90Z
N-channel transistor, 3.65A, 5.8A, 50uA, 1.56 Ohms, TO-247, TO-247, 900V. ID (T=100°C): 3.65A. ID (T=25°C): 5.8A. Idss (max): 50uA. On-resistance Rds On: 1.56 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 900V. C(in): 1350pF. Cost): 130pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 840 ns. Type of transistor: MOSFET. Function: protected with zener diode. G-S Protection: yes. Id(imp): 23.2A. IDss (min): 1uA. Marking on the case: W7NK90Z. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 17 ns. Technology: SuperMESH™ Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V
Set of 1
2.86$ VAT incl.
(2.86$ excl. VAT)
2.86$

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STP6NK90Z

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N-channel transistor, 3.65A, 5.8A, 50uA, 1.56 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 3.65A. ID (...
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STRA6151

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Number of terminals: 8. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (acc...
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