N-channel FETs and MOSFETs

N-channel transistor, 9A, 300uA, 1.1 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 900V. ID (T=25°C): 9A. Idss (max): 300uA. On-resistance Rds On: 1.1 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 900V. C(in): 1300pF. Cost): 180pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Speed, tr--25nS tf--20nS. Id(imp): 27A. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 40 ns. Technology: Field Effect Transistor MOS II.5. Operating temperature: -...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V

N-channel transistor, 3.2A, 5.5A, 5.5A, 1.2 Ohms, 400V. ID (T=100°C): 3.2A. ID (T=25°C): 5.5A. Idss (max): 5.5A. On-resistance Rds On: 1.2 Ohms. Voltage Vds(max): 400V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: DC-DC voltage converter. Pd (Power Dissipation, Max): 40W. Technology: V-MOS

N-channel transistor, PCB soldering, TO-220, 250V, 10A. Housing: PCB soldering. Housing: TO-220. Drain-source voltage Uds [V]: 250V. Drain Current Id [A] @ 25°C: 10A. RoHS: no. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: K1393. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.5 Ohms @ 5A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 150 ns. Switch-off delay tf[nsec.]: 200 ns. Ciss Gate Capacitance [pF]: 675pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 2.5A, 5A, 5A, 1.5 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 2.5A. ID (T=25°C): 5A. Idss (max): 5A. On-resistance Rds On: 1.5 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting

N-channel transistor, 2A, 3.6A, 3.6A, 3.6 Ohms, TO-220FP, TO-220F, 900V. ID (T=100°C): 2A. ID (T=25°C): 3.6A. Idss (max): 3.6A. On-resistance Rds On: 3.6 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS

N-channel transistor, 2A, 5A, 1mA, 2.8 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3BP, 900V. ID (T=100°C): 2A. ID (T=25°C): 5A. Idss (max): 1mA. On-resistance Rds On: 2.8 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3BP. Voltage Vds(max): 900V. C(in): 700pF. Cost): 300pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. G-S Protection: no. Id(imp): 10A. Marking on the case: K1461. Pd (Power Dissipation, Max): 120W. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 15 ns. Technology: V-MOS, S-L. Operating temperature: -...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Gate/emitter voltage VGE(th)max.: 3V. Gate/source voltage Vgs: 30 v

N-channel transistor, PCB soldering, 21F1B, 1 kV, 12A. Housing: PCB soldering. Housing: 21F1B. Drain-source voltage Uds [V]: 1 kV. Drain Current Id [A] @ 25°C: 12A. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SK1489. Drain current through resistor Rds [Ohm] @ Ids [A]: 1 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 3.5V. Switch-on time ton [nsec.]: 140 ns. Switch-off delay tf[nsec.]: 500 ns. Ciss Gate Capacitance [pF]: 2000pF. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

N-channel transistor, 9A, 500uA, 0.85 Ohms, TO-220FP, TO-220F, 600V. ID (T=25°C): 9A. Idss (max): 500uA. On-resistance Rds On: 0.85 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. C(in): 1200pF. Cost): 150pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. G-S Protection: no. Id(imp): 27A. IDss (min): 10uA. Marking on the case: K1507. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 30 ns. Technology: F-II Series POWER MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V

N-channel transistor, 10A, 1mA, TO-3P ( TO-218 SOT-93 ), 2-16C1B, 180V. ID (T=25°C): 10A. Idss (max): 1mA. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1B. Voltage Vds(max): 180V. C(in): 700pF. Cost): 150pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: High Power Amplifier Application. G-S Protection: no. Marking on the case: K1529. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Spec info: complementary transistor (pair) 2SJ200. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Silicon N-Channel MOS Type. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Gate/source voltage (off) min.: 0.8V

N-channel transistor, 4A, 8A, 8A, 1 Ohm, TO-220FP, TO-220F, 600V. ID (T=100°C): 4A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 1 Ohm. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Power MOSFET. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: FAP-IIA Series

N-channel transistor, 3A, 5A, 300uA, 1.9 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 900V. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 300uA. On-resistance Rds On: 1.9 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 900V. C(in): 690pF. Cost): 120pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 1450 ns. Type of transistor: MOSFET. Function: High-Speed. G-S Protection: no. Id(imp): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 70 ns. Technology: V-MOS. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 1.5V

N-channel transistor, 1A, 2A, 1mA, 3.2 Ohms, TO-220FP, TO-220FI, 600V. ID (T=100°C): 1A. ID (T=25°C): 2A. Idss (max): 1mA. On-resistance Rds On: 3.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FI. Voltage Vds(max): 600V. C(in): 400pF. Cost): 55pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Function: Ultrahigh-Speed Switching. G-S Protection: no. Id(imp): 8A. Marking on the case: K2043. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 10 ns. Technology: silicon MOSFET transistor. Gate/source voltage Vgs: 30 v. Gate/source voltage (off) max.: 4 v. Gate/source voltage (off) min.: 2V

N-channel transistor, 20mA, 12mA, TO-92, TO-92, 20V. ID (T=25°C): 20mA. Idss (max): 12mA. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 20V. C(in): 4pF. Cost): 4pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: FET. Function: FM Tuner Applications. G-S Protection: no. IDss (min): 0.6mA. Number of terminals: 3. Pd (Power Dissipation, Max): 200mW. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Gate/source voltage (off) max.: 2.5V

N-channel transistor, 7A, 8A, 8A, 0.4 Ohms, 200V. ID (T=100°C): 7A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 0.4 Ohms. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 100W. Technology: V-MOS

N-channel transistor, 3A, 6A, 6A, 0.8 Ohms, TO-220FP, TO-220F, 600V. ID (T=100°C): 3A. ID (T=25°C): 6A. Idss (max): 6A. On-resistance Rds On: 0.8 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 24A. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Technology: MOSFET transistor

N-channel transistor, 4.5A, 9A, 9A, 0.35 Ohms, TO-220FP, TO-220F, 200V. ID (T=100°C): 4.5A. ID (T=25°C): 9A. Idss (max): 9A. On-resistance Rds On: 0.35 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 200V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: V-MOS-L

N-channel transistor, 2A, 2A, 1.2 Ohms, TO-220, TO-220AB, 250V. ID (T=25°C): 2A. Idss (max): 2A. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High speed switching, td(on)--25nS, dt(off)--50nS. Id(imp): 8A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Technology: FAP-IIA Series

N-channel transistor, 2A, 2A, 1.2 Ohms, TO-220, TO-220AB, 250V. ID (T=25°C): 2A. Idss (max): 2A. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 250V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High speed switching, td(on)--25nS, dt(off)--50nS. Id(imp): 8A. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Technology: FAP-IIA Series

N-channel transistor, 27A, 100uA, 0.09 Ohms, TO-220, TO-220AB, 100V. ID (T=25°C): 27A. Idss (max): 100uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1100pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 155 ns. Type of transistor: MOSFET. Function: Car electronics. G-S Protection: yes. Id(imp): 108A. Marking on the case: K2314. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: ESD Protected--2000V min. Assembly/installation: PCB through-hole mounting. Td(off): 140us. Td(on): 30us. Technology: Power Field-Effect Transistor. Operating temperature: -50...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 0.8V

N-channel transistor, 3A, 6A, 6A, 2 Ohms, 700V. ID (T=100°C): 3A. ID (T=25°C): 6A. Idss (max): 6A. On-resistance Rds On: 2 Ohms. Voltage Vds(max): 700V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Note: 70/160ns. Pd (Power Dissipation, Max): 50W. Technology: V-MOS (F)

N-channel transistor, 25A, 100uA, 0.23 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 500V. ID (T=25°C): 25A. Idss (max): 100uA. On-resistance Rds On: 0.23 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 500V. C(in): 3600pF. Cost): 700pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: Chopper Regulator, DC-DC Converter. G-S Protection: no. Id(imp): 100A. Marking on the case: K2372. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 160 ns. Td(on): 40 ns. Technology: MOSFET transistor. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2.5V

N-channel transistor, 7.5A, 7.5A, 0.42 Ohms, TO-220FP, TO-220F, 250V. ID (T=25°C): 7.5A. Idss (max): 7.5A. On-resistance Rds On: 0.42 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 250V. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 30A. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Transistor

N-channel transistor, 3mA, 14mA, TO-92, TO-92. ID (T=25°C): 3mA. Idss (max): 14mA. Housing: TO-92. Housing (according to data sheet): TO-92. Channel type: N. Quantity per case: 1. Function: complementary transistor (pair) 2SJ103. IDss (min): 6mA. Marking on the case: K246BL. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Gate/source voltage Vgs: -30V. Gate/source voltage (off) max.: 6V. Gate/source voltage (off) min.: 0.7V

N-channel transistor, 3A, 100uA, 3.2 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 3A. Idss (max): 100uA. On-resistance Rds On: 3.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. C(in): 900pF. Cost): 130pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: High-Voltage Switching Applications. G-S Protection: no. Id(imp): 12A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 35W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 63 ns. Td(on): 17 ns. Technology: MOSFET transistor. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V

N-channel transistor, 25A, 100uA, 0.046 Ohms, TO-220FP, TO-220F, 50V. ID (T=25°C): 25A. Idss (max): 100uA. On-resistance Rds On: 0.046 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 50V. C(in): 900pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. Function: Yfs--8-16S. G-S Protection: yes. Id(imp): 75A. IDss (min): 10uA. Marking on the case: K2507. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 25 ns. Technology: Field Effect MOS Type(L2-TT-MOSV). Gate/source voltage Vgs: 20V. Vgs(th) min.: 0.8V