N-channel transistor, 75A, Other, Other, 1200V - FS75R12KE3GBOSA1
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 304.77$ | 304.77$ |
| 2 - 2 | 289.53$ | 289.53$ |
| 3 - 4 | 283.43$ | 283.43$ |
| 5 - 9 | 277.34$ | 277.34$ |
| 10 - 14 | 274.29$ | 274.29$ |
| 15 - 19 | 271.24$ | 271.24$ |
| 20+ | 268.20$ | 268.20$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 304.77$ | 304.77$ |
| 2 - 2 | 289.53$ | 289.53$ |
| 3 - 4 | 283.43$ | 283.43$ |
| 5 - 9 | 277.34$ | 277.34$ |
| 10 - 14 | 274.29$ | 274.29$ |
| 15 - 19 | 271.24$ | 271.24$ |
| 20+ | 268.20$ | 268.20$ |
N-channel transistor, 75A, Other, Other, 1200V - FS75R12KE3GBOSA1. N-channel transistor, 75A, Other, Other, 1200V. Ic(T=100°C): 75A. Housing: Other. Housing (according to data sheet): Other. Collector/emitter voltage Vceo: 1200V. C(in): 5300pF. CE diode: yes. Channel type: N. Function: ICRM 150A Tp=1ms. Germanium diode: no. Collector current: 100A. Ic(pulse): 150A. Note: 6x IGBT+ CE Diode. Marking on the case: FS75R12KE3G. Number of terminals: 35. Dimensions: 122x62x17.5mm. Pd (Power Dissipation, Max): 355W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 42us. Td(on): 26us. Operating temperature: -40...+125°C. Saturation voltage VCE(sat): 1.65V. Maximum saturation voltage VCE(sat): 2.15V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.5V. Gate/emitter voltage VGE(th)max.: 6.5V. Original product from manufacturer Eupec/infineon. Quantity in stock updated on 24/06/2025, 14:25.
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