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Semiconductors Diodes

1N5408

1N5408
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[TITLE]
[TITLE]
[TITLE]
[TITLE]
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Quantity (Set of 5) excl. VAT VAT incl.
1 - 2 0.52$ 0.52$
3 - 4 0.49$ 0.49$
5 - 9 0.46$ 0.46$
10 - 19 0.44$ 0.44$
20 - 49 0.41$ 0.41$
50 - 99 0.39$ 0.39$
100 - 4911 0.36$ 0.36$
Quantity (Set of 5) U.P
1 - 2 0.52$ 0.52$
3 - 4 0.49$ 0.49$
5 - 9 0.46$ 0.46$
10 - 19 0.44$ 0.44$
20 - 49 0.41$ 0.41$
50 - 99 0.39$ 0.39$
100 - 4911 0.36$ 0.36$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 24551
Set of 5

1N5408. Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--200Ap t=8.3ms. Quantity in stock updated on 24/12/2024, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 2918
BY255

BY255

RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Conf...
BY255
RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 1.3 kV. Leakage current on closing Ir [A]: 5uA. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.1V @ 3A. Housing (JEDEC standard): silicon. Switching speed (regeneration time) tr [sec.]: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V
BY255
RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Configuration: PCB through-hole mounting. Number of terminals: 2. Forward current [A]: 3A. Ifsm [A]: 110A. Close voltage (repetitive) Vrrm [V]: 1.3 kV. Leakage current on closing Ir [A]: 5uA. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.1V @ 3A. Housing (JEDEC standard): silicon. Switching speed (regeneration time) tr [sec.]: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1300V
Set of 1
0.15$ VAT incl.
(0.15$ excl. VAT)
0.15$

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1N4007

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VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor mate...
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2N6509

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1N5408

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Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silico...
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1N4148

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PP-1746

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SW2001-3S

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BZV85C5V1

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Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function...
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2N1711

2N1711

Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70MHz. Collector current: 50...
2N1711
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MUR460

MUR460

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Funct...
MUR460
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