Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.13$ | 0.13$ |
10 - 24 | 0.13$ | 0.13$ |
25 - 49 | 0.12$ | 0.12$ |
50 - 99 | 0.11$ | 0.11$ |
100 - 249 | 0.11$ | 0.11$ |
250 - 499 | 0.0913$ | 0.0913$ |
500 - 9378 | 0.0852$ | 0.0852$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.13$ | 0.13$ |
10 - 24 | 0.13$ | 0.13$ |
25 - 49 | 0.12$ | 0.12$ |
50 - 99 | 0.11$ | 0.11$ |
100 - 249 | 0.11$ | 0.11$ |
250 - 499 | 0.0913$ | 0.0913$ |
500 - 9378 | 0.0852$ | 0.0852$ |
1N5408. Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. Forward current (AV): 3A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--200Ap t=8.3ms. Quantity in stock updated on 04/04/2025, 22:25.
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