Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.82$ | 2.82$ |
5 - 9 | 2.68$ | 2.68$ |
10 - 24 | 2.59$ | 2.59$ |
25 - 49 | 2.54$ | 2.54$ |
50 - 99 | 2.48$ | 2.48$ |
100 - 128 | 2.39$ | 2.39$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.82$ | 2.82$ |
5 - 9 | 2.68$ | 2.68$ |
10 - 24 | 2.59$ | 2.59$ |
25 - 49 | 2.54$ | 2.54$ |
50 - 99 | 2.48$ | 2.48$ |
100 - 128 | 2.39$ | 2.39$ |
NPN-Transistor, 10A, TO-3PN ( 2-16C1B ), 2-16C1A, 140V - 2SA1941-TOS. NPN-Transistor, 10A, TO-3PN ( 2-16C1B ), 2-16C1A, 140V. Collector current: 10A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1A. Collector/emitter voltage Vceo: 140V. BE diode: no. Cost): 320pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: A1941. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: complementary transistor (pair) 2SC5198. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 140V. Saturation voltage VCE(sat): 0.8V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 29/05/2025, 06:25.
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