Diode rectifier bridges

RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Rated current [A]: 35A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 300A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Pinout: 6.3x0.8mm faston terminal. Dielectric structure: Diode bridge. Forward current (AV): 35A. IFSM: 375A 50Hz (10ms). MRI (min): 10uA. Outer material: plastic housing with cooling face. Dimensions: 28.6x28.6x7.3mm. RoHS: yes. Assembly/installation: screw. Tr: 1500 ns. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.1V. VRRM: 1000V

Pinout: 6.3x0.8mm faston terminal. Dielectric structure: Diode bridge. Forward current (AV): 35A. IFSM: 375A 50Hz (10ms). MRI (min): 10uA. Outer material: plastic housing with cooling face. Dimensions: 28.6x28.6x7.3mm. RoHS: yes. Assembly/installation: screw. Tr: 1500 ns. Flammability class: UL94V-0. Operating temperature: -50...+150°C. Forward voltage Vf (min): 1.1V. VRRM: 1600V

Pinout: solder connections on printed circuit. Dielectric structure: Diode bridge. Forward current (AV): 35A. IFSM: 330A 50Hz (10ms). MRI (min): 10uA. Dimensions: 28.6x28.6x7.3mm. RoHS: yes. Assembly/installation: screw. Tr: 1500 ns. Operating temperature: -55...+150°C. Forward voltage Vf (min): 1.1V. VRRM: 1600V

Cj: 300pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Bridge rectifier. diode rectifier bridge. Forward current (AV): 50A. IFSM: 400A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: MB5005. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 50V. Spec info: IFSM--400Ap (t=8.2ms)

RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Rated current [A]: 50A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 100V. Peak current Ifsm [A]: 400A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Cj: 300pF. Dielectric structure: Diode bridge. Forward current (AV): 50A. IFSM: 400A. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 200V. Spec info: IFSM--400Ap (t=8.2ms)

Quantity per case: 4. Semiconductor material: silicon. Forward current (AV): 50A. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. VRRM: 400V

Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 50A. IFSM: 400A. MRI (max): 664uA. MRI (min): 10uA. RoHS: yes. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4. Dimensions of connections: 6.4x0.8mm faston terminal

RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Rated current [A]: 50A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 400A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 50A. IFSM: 400A. MRI (max): 664uA. MRI (min): 10uA. RoHS: yes. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 800V. Number of terminals: 4. Dimensions of connections: 6.4x0.8mm faston terminal. Spec info: IFSM--400Ap (t=8.3ms)

RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Rated current [A]: 50A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 400A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Cj: 300pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Bridge rectifier. diode rectifier bridge. Forward current (AV): 50A. IFSM: 500A. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Spec info: IFSM--400Ap (t=8.2ms)

RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Rated current [A]: 50A. Threshold voltage Uf [V]: 1.1V. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 400A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Dimensions of connections: 10.8x10.8mm. Dimensions: 15.2x15.2mm

Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 6A. IFSM: 125A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 10.8x10.8mm. RoHS: yes. Pitch: 15.2x15.2mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4. Spec info: Ifsm 125A (t=8.2ms)

Cj: 186pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Bridge rectifier. diode rectifier bridge. Three-phase: 0. Forward current (AV): 6A. IFSM: 125A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 10.8x10.8mm. RoHS: yes. Pitch: 15.2x15.2mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: Ifsm 125Ap (t=8.3ms)

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 19x19x6.8mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 8A. Threshold voltage Uf [V]: 1.2V. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 135A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Function: Rectifier bridge. Forward current (AV): 10A. VRRM: 800V. Equivalents: KBU1008. Series: KBU. Assembly/installation: PCB through-hole mounting

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 4A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 400V. Peak current Ifsm [A]: 180A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 4A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 180A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Rated current [A]: 4A. Threshold voltage Uf [V]: 1V. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 180A. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Function: Rectifier bridge. Forward current (AV): 6A. VRRM: 1000V. Series: KBU. Housing: SIL. Assembly/installation: PCB through-hole mounting

Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 6A. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: KBU6J, KBU606, RS605. Pitch: 5.08x5.08mm. Dimensions: 23x19x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Quantity per case: 4. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)

Function: Rectifier bridge. Forward current (AV): 8A. VRRM: 600V. Series: KBU. Housing: SIL. Assembly/installation: PCB through-hole mounting