Diode rectifier bridges

Rated current [A]: 50A. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 400A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

VRRM: 1000V. Forward current (AV): 50A. Cj: 300pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Bridge rectifier. diode rectifier bridge. IFSM: 500A. MRI (max): 500uA. MRI (min): 10uA. Dimensions of connections: 6.4x0.8mm faston terminal. Number of terminals: 4. RoHS: yes. Pitch: 28x28mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--400Ap (t=8.2ms)

Rated current [A]: 50A. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 400A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.6x28.6x7.3mm. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Dimensions of connections: 10.8x10.8mm. Dimensions: 15.2x15.2mm

VRRM: 600V. Forward current (AV): 6A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 125A. MRI (max): 500uA. MRI (min): 10uA. Pitch: 10.8x10.8mm. RoHS: yes. Pitch: 15.2x15.2mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Quantity per case: 4. Number of terminals: 4. Spec info: Ifsm 125A (t=8.2ms)

VRRM: 1000V. Forward current (AV): 6A. Cj: 186pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Bridge rectifier. diode rectifier bridge. Three-phase: 0. IFSM: 125A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 10.8x10.8mm. RoHS: yes. Pitch: 15.2x15.2mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: Ifsm 125Ap (t=8.3ms)

Rated current [A]: 8A. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 135A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 19x19x6.8mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 4A. Peak voltage Urrm [V]: 400V. Peak current Ifsm [A]: 180A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 4A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 180A. RoHS: no. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 4A. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 180A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 600V. Forward current (AV): 6A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Equivalents: KBU6J, KBU606, RS605. Pitch: 5.08x5.08mm. Dimensions: 23x19x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Quantity per case: 4. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)

Rated current [A]: 8A. Peak voltage Urrm [V]: 100V. Peak current Ifsm [A]: 270A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 600V. Rated current [A]: 8A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 270A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Housing (JEDEC standard): 8A. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 8A. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 270A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 23.5x5.7x19.3mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 1000V. Forward current (AV): 8A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. Equivalents: KBU8M, KBU807. Number of terminals: 4. Pitch: 5.08x5.08mm. Dimensions: 21.5x18.3x3.4mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: IFSM--200Ap (t=8.3ms), IFSM--180Ap (t=10ms)

VRRM: 1000V. Forward current (AV): 0.5A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 25A. MRI (max): 500uA. MRI (min): 5uA. Equivalents: MB10S. Number of terminals: 4. Pitch: 2.5mm. Dimensions: 4.8x3.8x1.4mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): MBF. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: maximum thickness 1.6mm

VRRM: 1000V. Forward current (AV): 0.8A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Equivalents: MB10F. Number of terminals: 4. Pitch: 2.5mm. Dimensions: 4.8x3.9x2.5mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing (according to data sheet): MBF. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: maximum thickness 2.7mm

Rated current [A]: 0.5A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 32A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 600V. Forward current (AV): 0.5A. Semiconductor material: silicon. Function: 230V mains rectifier. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Marking on the case: B6. Pitch: 2.54mm. Assembly/installation: surface-mounted component (SMD). Housing: TO-269AA (MBS). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Number of terminals: 4. Dimensions: case dimensions 4.1x4.95mm

Rated current [A]: 0.5A. Peak voltage Urrm [V]: 800V. Peak current Ifsm [A]: 32A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 0.5A. Peak voltage Urrm [V]: 250V. Peak current Ifsm [A]: 20A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: MicroDIL. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 0.5A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 20A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 3x3x1.8mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Rated current [A]: 0.5A. Peak voltage Urrm [V]: 160V. Peak current Ifsm [A]: 20A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: 3x3x1.8mm. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Rated current [A]: 10A. Peak voltage Urrm [V]: 200V. Peak current Ifsm [A]: 135A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 15.1x15.1x6.3 mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.2V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 1200V. Forward current (AV): 68A. Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. IFSM: 300A. MRI (max): 3mA. MRI (min): 0.5mA. Dimensions of connections: 0.75x12.3mm. Dimensions: 47x30x8mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.46V. Forward voltage Vf (min): 1.46V. Number of terminals: 5. Spec info: IFSM--45° t=10ms (50Hz) 300A, t=8.3ms (60Hz) 320A