Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.82$ | 0.82$ |
5 - 9 | 0.78$ | 0.78$ |
10 - 24 | 0.74$ | 0.74$ |
25 - 49 | 0.69$ | 0.69$ |
50 - 99 | 0.68$ | 0.68$ |
100 - 169 | 0.60$ | 0.60$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.82$ | 0.82$ |
5 - 9 | 0.78$ | 0.78$ |
10 - 24 | 0.74$ | 0.74$ |
25 - 49 | 0.69$ | 0.69$ |
50 - 99 | 0.68$ | 0.68$ |
100 - 169 | 0.60$ | 0.60$ |
GBU606. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 135A. MRI (max): 10uA. Equivalents: KBU6J, KBU606, RS605. Pitch: 5.08x5.08x5.08mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 1V. VRRM: 800V. Number of terminals: 4. Forward current (AV): 6A (2.8A without heat sink). Housing (according to data sheet): SIP-4 (21.8x18.3x3.5mm). Quantity in stock updated on 25/12/2024, 06:25.
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