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Semiconductors Diodes Diode rectifier bridges

GBU4J

GBU4J
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.94$ 0.94$
5 - 9 0.90$ 0.90$
10 - 24 0.85$ 0.85$
25 - 49 0.80$ 0.80$
50 - 99 0.78$ 0.78$
100 - 249 0.69$ 0.69$
250 - 250 0.75$ 0.75$
Quantity U.P
1 - 4 0.94$ 0.94$
5 - 9 0.90$ 0.90$
10 - 24 0.85$ 0.85$
25 - 49 0.80$ 0.80$
50 - 99 0.78$ 0.78$
100 - 249 0.69$ 0.69$
250 - 250 0.75$ 0.75$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 250
Set of 1

GBU4J. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: no. Forward current (AV): 4A. IFSM: 150A. Equivalents: KBL406, RS406, RS406G. Pitch: 5.08mm. Dimensions: 22x19x3.3mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. VRRM: 600V. Quantity per case: 4. Number of terminals: 4. Spec info: Ifsm 150Ap (t=8.3ms). Quantity in stock updated on 08/04/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 359
KBL08

KBL08

Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. For...
KBL08
Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 4A. IFSM: 200A. Equivalents: KBL408, RS408, RS408G, GBU406. Pitch: 5.08mm. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. VRRM: 800V. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)
KBL08
Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Forward current (AV): 4A. IFSM: 200A. Equivalents: KBL408, RS408, RS408G, GBU406. Pitch: 5.08mm. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. VRRM: 800V. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)
Set of 1
0.69$ VAT incl.
(0.69$ excl. VAT)
0.69$
Quantity in stock : 132
KBL10

KBL10

Cj: 40pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
KBL10
Cj: 40pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 4A. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: RS407. Dimensions of connections: 5.08x5.08mm. Number of terminals: 4. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: IFSM--200Ap (t=8.3ms)
KBL10
Cj: 40pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 4A. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: RS407. Dimensions of connections: 5.08x5.08mm. Number of terminals: 4. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: IFSM--200Ap (t=8.3ms)
Set of 1
0.80$ VAT incl.
(0.80$ excl. VAT)
0.80$

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FUSE-3-150A20F

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Max Continuous current: 3.15A. Fuse type: Glass (Cylindrical). Fuse properties: fast blow fuse (F)...
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FUSE-6-300A20F

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KBL06

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Quantity in stock : 293
KBP06

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Quantity in stock : 53
KBPC3510

KBPC3510

Forward current (AV): 35A. VRRM: 1000V. IFSM: 400A. MRI (max): 1mA. MRI (min): 10uA. Dimensions of c...
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Quantity in stock : 58
GBJ2510

GBJ2510

Conditioning: plastic tube. Conditioning unit: 15. Quantity per case: 4. Dielectric structure: Diode...
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Quantity in stock : 156
BR310

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Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward c...
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V23072C1062A303

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