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1N5399

1N5399
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.62$ 0.62$
5 - 9 0.59$ 0.59$
10 - 24 0.56$ 0.56$
25 - 49 0.48$ 0.48$
50 - 99 0.45$ 0.45$
Quantity (Set of 10) U.P
1 - 4 0.62$ 0.62$
5 - 9 0.59$ 0.59$
10 - 24 0.56$ 0.56$
25 - 49 0.48$ 0.48$
50 - 99 0.45$ 0.45$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 995
Set of 10

1N5399. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 50uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap, t=8.3mS. Quantity in stock updated on 24/12/2024, 02:25.

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