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Semiconductors Diodes Standard and Rectifier Diodes

BYT52M

BYT52M
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[TITLE]
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 0.96$ 0.96$
5 - 9 0.91$ 0.91$
10 - 24 0.86$ 0.86$
25 - 49 0.81$ 0.81$
50 - 99 0.80$ 0.80$
100 - 191 0.78$ 0.78$
Quantity U.P
1 - 4 0.96$ 0.96$
5 - 9 0.91$ 0.91$
10 - 24 0.86$ 0.86$
25 - 49 0.81$ 0.81$
50 - 99 0.80$ 0.80$
100 - 191 0.78$ 0.78$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 191
Set of 1

BYT52M. Semiconductor material: silicon. Function: Fast rectification and switching diode. Forward current (AV): 1.4A. IFSM: 50A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Tr: 200 ns. Threshold voltage Vf (max): 1.3V. VRRM: 1000V. Number of terminals: 2. Quantity in stock updated on 25/12/2024, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 9336
1N4937

1N4937

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
1N4937
RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: Fast Switching for High Efficiency. Forward current (AV): 1A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Spec info: IFSM--30Ap t=8.3mS
1N4937
RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: Fast Switching for High Efficiency. Forward current (AV): 1A. IFSM: 30A. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): DO-41 ( DO-204AL ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Spec info: IFSM--30Ap t=8.3mS
Set of 10
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 412
HER308

HER308

Cj: 80pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switc...
HER308
Cj: 80pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 3A. IFSM: 125A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Spec info: Ifsm 125Ap T=8.3ms
HER308
Cj: 80pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Forward current (AV): 3A. IFSM: 125A. MRI (max): 200uA. MRI (min): 10uA. RoHS: yes. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Number of terminals: 2. Note: high efficiency rectifier diode. Quantity per case: 1. Spec info: Ifsm 125Ap T=8.3ms
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 53
RG4C

RG4C

Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fas...
RG4C
Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 2A. IFSM: 60A. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V. VRRM: 1000V
RG4C
Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Forward current (AV): 2A. IFSM: 60A. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V. VRRM: 1000V
Set of 1
1.95$ VAT incl.
(1.95$ excl. VAT)
1.95$
Quantity in stock : 199
BYT56M

BYT56M

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Func...
BYT56M
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. Forward current (AV): 3A. IFSM: 80A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: IFSM--80Ap (t=10ms)
BYT56M
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. Forward current (AV): 3A. IFSM: 80A. MRI (max): 150uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: IFSM--80Ap (t=10ms)
Set of 1
1.31$ VAT incl.
(1.31$ excl. VAT)
1.31$

We also recommend :

Quantity in stock : 2123
BYV26E

BYV26E

Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 75 ns. Semiconductor material: sili...
BYV26E
[LONGDESCRIPTION]
BYV26E
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0.53$ VAT incl.
(0.53$ excl. VAT)
0.53$
Quantity in stock : 544
TZ-D-113

TZ-D-113

Trigger temperature: 113°C. Max Continuous current: 10A. Fuse type: thermal fuses. Fuse propertie...
TZ-D-113
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TZ-D-113
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0.85$ VAT incl.
(0.85$ excl. VAT)
0.85$
Quantity in stock : 81
MUR4100E

MUR4100E

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Funct...
MUR4100E
[LONGDESCRIPTION]
MUR4100E
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.89$ VAT incl.
(0.89$ excl. VAT)
0.89$
Quantity in stock : 2377
FR207

FR207

Cj: 30pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semic...
FR207
[LONGDESCRIPTION]
FR207
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.25$ VAT incl.
(0.25$ excl. VAT)
0.25$
Quantity in stock : 10785
BY133

BY133

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
BY133
[LONGDESCRIPTION]
BY133
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.0491$ VAT incl.
(0.0491$ excl. VAT)
0.0491$
Quantity in stock : 412
HER308

HER308

Cj: 80pF. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switc...
HER308
[LONGDESCRIPTION]
HER308
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 2918
BY255

BY255

RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Conf...
BY255
[LONGDESCRIPTION]
BY255
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.15$ VAT incl.
(0.15$ excl. VAT)
0.15$
Quantity in stock : 2302
1N5062

1N5062

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function...
1N5062
[LONGDESCRIPTION]
1N5062
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.0920$ VAT incl.
(0.0920$ excl. VAT)
0.0920$
Quantity in stock : 160
BYW56

BYW56

Cj: 50pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silico...
BYW56
[LONGDESCRIPTION]
BYW56
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.64$ VAT incl.
(0.64$ excl. VAT)
0.64$

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