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Semiconductors Diodes Standard and Rectifier Diodes

BYT52M

BYT52M
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[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 0.96$ 0.96$
5 - 9 0.91$ 0.91$
10 - 24 0.88$ 0.88$
25 - 49 0.86$ 0.86$
50 - 99 0.84$ 0.84$
100 - 157 0.81$ 0.81$
Quantity U.P
1 - 4 0.96$ 0.96$
5 - 9 0.91$ 0.91$
10 - 24 0.88$ 0.88$
25 - 49 0.86$ 0.86$
50 - 99 0.84$ 0.84$
100 - 157 0.81$ 0.81$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 157
Set of 1

BYT52M. Forward current (AV): 1.4A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. VRRM: 1000V. Semiconductor material: silicon. Function: Fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tr: 200 ns. Threshold voltage Vf (max): 1.3V. Original product from manufacturer Vishay. Quantity in stock updated on 21/05/2025, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 8690
1N4937

1N4937

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-2...
1N4937
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: Fast Switching for High Efficiency. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
1N4937
Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: Fast Switching for High Efficiency. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--30Ap t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V
Set of 10
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 407
HER308

HER308

Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD (...
HER308
Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). VRRM: 1000V. Cj: 80pF. Quantity per case: 1. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap T=8.3ms. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
HER308
Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD ( 9.0x5.3mm ). VRRM: 1000V. Cj: 80pF. Quantity per case: 1. Trr Diode (Min.): 75 ns. Semiconductor material: silicon. Function: High Speed ​​Switching. Note: high efficiency rectifier diode. MRI (max): 200uA. MRI (min): 10uA. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 125Ap T=8.3ms. Weight: 1.1g. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 53
RG4C

RG4C

Forward current (AV): 2A. IFSM: 60A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x...
RG4C
Forward current (AV): 2A. IFSM: 60A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 1000V. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V
RG4C
Forward current (AV): 2A. IFSM: 60A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 6.5x8.0mm ). VRRM: 1000V. Quantity per case: 1. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: ultra-fast rectifier diode. Note: SAMSUNG 0402-000250. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 3V. Forward voltage Vf (min): 3V
Set of 1
1.95$ VAT incl.
(1.95$ excl. VAT)
1.95$
Quantity in stock : 199
BYT56M

BYT56M

Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): S...
BYT56M
Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1000V. Conditioning unit: 2500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V
BYT56M
Forward current (AV): 3A. IFSM: 80A. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. VRRM: 1000V. Conditioning unit: 2500. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Very fast rectification and switching diode. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (t=10ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 1.4V
Set of 1
1.31$ VAT incl.
(1.31$ excl. VAT)
1.31$

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Quantity in stock : 2121
BYV26E

BYV26E

Forward current (AV): 1A. IFSM: 30A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): S...
BYV26E
[LONGDESCRIPTION]
BYV26E
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0.53$ VAT incl.
(0.53$ excl. VAT)
0.53$
Quantity in stock : 497
TZ-D-113

TZ-D-113

Trigger temperature: 113°C. Max Continuous current: 10A. Fuse type: thermal fuses. Fuse propertie...
TZ-D-113
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TZ-D-113
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0.85$ VAT incl.
(0.85$ excl. VAT)
0.85$
Quantity in stock : 75
MUR4100E

MUR4100E

Forward current (AV): 4A. IFSM: 70A. Housing: DO-201. Housing (according to data sheet): D0-201AD ( ...
MUR4100E
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MUR4100E
[LONGDESCRIPTION]
[MODCATID]
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0.89$ VAT incl.
(0.89$ excl. VAT)
0.89$
Quantity in stock : 2301
FR207

FR207

Forward current (AV): 2A. IFSM: 60A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.2x...
FR207
[LONGDESCRIPTION]
FR207
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.25$ VAT incl.
(0.25$ excl. VAT)
0.25$
Quantity in stock : 10621
BY133

BY133

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 2.6x...
BY133
[LONGDESCRIPTION]
BY133
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.0491$ VAT incl.
(0.0491$ excl. VAT)
0.0491$
Quantity in stock : 407
HER308

HER308

Forward current (AV): 3A. IFSM: 125A. Housing: DO-201. Housing (according to data sheet): DO-201AD (...
HER308
[LONGDESCRIPTION]
HER308
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.31$ VAT incl.
(0.31$ excl. VAT)
0.31$
Quantity in stock : 2660
BY255

BY255

RoHS: yes. Component family: Standard rectifier diode. Housing: PCB soldering. Housing: DO-201. Hous...
BY255
[LONGDESCRIPTION]
BY255
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.15$ VAT incl.
(0.15$ excl. VAT)
0.15$
Quantity in stock : 2262
1N5062

1N5062

Forward current (AV): 2A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( DO-2...
1N5062
[LONGDESCRIPTION]
1N5062
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.0920$ VAT incl.
(0.0920$ excl. VAT)
0.0920$
Quantity in stock : 160
BYW56

BYW56

Forward current (AV): 2A. IFSM: 50A. Housing: SOD-57 ( Glass ). Housing (according to data sheet): S...
BYW56
[LONGDESCRIPTION]
BYW56
[LONGDESCRIPTION]
[MODCATID]
[LOT]
0.64$ VAT incl.
(0.64$ excl. VAT)
0.64$

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