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1N5908

1N5908
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.78$ 0.78$
5 - 9 0.74$ 0.74$
10 - 24 0.70$ 0.70$
25 - 49 0.57$ 0.57$
50 - 99 0.55$ 0.55$
100 - 249 0.54$ 0.54$
250 - 812 0.51$ 0.51$
Quantity U.P
1 - 4 0.78$ 0.78$
5 - 9 0.74$ 0.74$
10 - 24 0.70$ 0.70$
25 - 49 0.57$ 0.57$
50 - 99 0.55$ 0.55$
100 - 249 0.54$ 0.54$
250 - 812 0.51$ 0.51$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 812
Set of 1

1N5908. Dielectric structure: unidirectional. Semiconductor material: silicon. Breakdown voltage: 5V. Pd (Power Dissipation, Max): 1.5 kW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 (5.5x9.5mm). Leakage current on closing Ir [A] @ Uz [V]: 300uA @ 5V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 1500W @ 1ms. Number of terminals: 2. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection. Quantity in stock updated on 25/12/2024, 02:25.

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