Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.78$ | 0.78$ |
5 - 9 | 0.74$ | 0.74$ |
10 - 24 | 0.70$ | 0.70$ |
25 - 49 | 0.57$ | 0.57$ |
50 - 99 | 0.55$ | 0.55$ |
100 - 249 | 0.54$ | 0.54$ |
250 - 812 | 0.51$ | 0.51$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.78$ | 0.78$ |
5 - 9 | 0.74$ | 0.74$ |
10 - 24 | 0.70$ | 0.70$ |
25 - 49 | 0.57$ | 0.57$ |
50 - 99 | 0.55$ | 0.55$ |
100 - 249 | 0.54$ | 0.54$ |
250 - 812 | 0.51$ | 0.51$ |
1N5908. Dielectric structure: unidirectional. Semiconductor material: silicon. Breakdown voltage: 5V. Pd (Power Dissipation, Max): 1.5 kW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 (5.5x9.5mm). Leakage current on closing Ir [A] @ Uz [V]: 300uA @ 5V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 1500W @ 1ms. Number of terminals: 2. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection. Quantity in stock updated on 25/12/2024, 02:25.
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