1N5908

Quantity	excl. VAT	VAT incl.
1 - 4	0.78$	0.78$
5 - 9	0.74$	0.74$
10 - 24	0.71$	0.71$
25 - 49	0.60$	0.60$
50 - 99	0.59$	0.59$
100 - 249	0.57$	0.57$
250 - 779	0.55$	0.55$

Quantity	U.P
1 - 4	0.78$	0.78$
5 - 9	0.74$	0.74$
10 - 24	0.71$	0.71$
25 - 49	0.60$	0.60$
50 - 99	0.59$	0.59$
100 - 249	0.57$	0.57$
250 - 779	0.55$	0.55$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 779

Set of 1

1N5908. RoHS: yes. Leakage current on closing Ir [A] @ Uz [V]: 300uA @ 5V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 1500W @ 1ms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Dielectric structure: unidirectional. Semiconductor material: silicon. Function: transil diode, overvoltage protection. Number of terminals: 2. Breakdown voltage: 5V. Pd (Power Dissipation, Max): 1.5 kW. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 (5.5x9.5mm). Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 14/06/2025, 13:25.

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Delivery in 2-3 days, with postal tracking!