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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 80V, 4A, TO-126 - BD441

NPN transistor, 80V, 4A, TO-126 - BD441
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.28$ 0.28$
5 - 9 0.26$ 0.26$
10 - 24 0.25$ 0.25$
25 - 49 0.24$ 0.24$
50 - 99 0.23$ 0.23$
100 - 249 0.22$ 0.22$
250 - 654 0.21$ 0.21$
Quantity U.P
1 - 4 0.28$ 0.28$
5 - 9 0.26$ 0.26$
10 - 24 0.25$ 0.25$
25 - 49 0.24$ 0.24$
50 - 99 0.23$ 0.23$
100 - 249 0.22$ 0.22$
250 - 654 0.21$ 0.21$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 654
Set of 1

NPN transistor, 80V, 4A, TO-126 - BD441. NPN transistor, 80V, 4A, TO-126. Collector-Emitter Voltage VCEO: 80V. Collector current: 4A. Housing: TO-126. Type of transistor: NPN power transistor. Polarity: NPN. Power: 36W. Max frequency: 3MHz. Quantity in stock updated on 20/04/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 397
MJE243G

MJE243G

NPN transistor, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according...
MJE243G
NPN transistor, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Housing: TO-126 (TO-225, SOT-32). Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Spec info: complementary transistor (pair) MJE253. BE diode: no. CE diode: no
MJE243G
NPN transistor, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector current: 4A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Housing: TO-126 (TO-225, SOT-32). Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Spec info: complementary transistor (pair) MJE253. BE diode: no. CE diode: no
Set of 1
0.85$ VAT incl.
(0.85$ excl. VAT)
0.85$

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MJE253G

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