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MJE253G

MJE253G
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.84$ 0.84$
5 - 9 0.80$ 0.80$
10 - 24 0.76$ 0.76$
25 - 49 0.71$ 0.71$
50 - 99 0.70$ 0.70$
100 - 249 0.61$ 0.61$
250 - 438 0.64$ 0.64$
Quantity U.P
1 - 4 0.84$ 0.84$
5 - 9 0.80$ 0.80$
10 - 24 0.76$ 0.76$
25 - 49 0.71$ 0.71$
50 - 99 0.70$ 0.70$
100 - 249 0.61$ 0.61$
250 - 438 0.64$ 0.64$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 438
Set of 1

MJE253G. Type of transistor: Power Transistor. Polarity: PNP. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Power: 15W. Max frequency: 40 MHz. Housing: TO-126. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Collector current: 4A. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 100V. Vebo: 7V. Spec info: complementary transistor (pair) MJE243. Housing: TO-126 (TO-225, SOT-32). Quantity in stock updated on 10/01/2025, 17:25.

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