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Semiconductors Transistors

BC557C

BC557C
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.45$ 0.45$
5 - 9 0.43$ 0.43$
10 - 24 0.41$ 0.41$
25 - 49 0.38$ 0.38$
50 - 99 0.45$ 0.45$
100 - 149 0.46$ 0.46$
150 - 999 0.45$ 0.45$
Quantity (Set of 10) U.P
1 - 4 0.45$ 0.45$
5 - 9 0.43$ 0.43$
10 - 24 0.41$ 0.41$
25 - 49 0.38$ 0.38$
50 - 99 0.45$ 0.45$
100 - 149 0.46$ 0.46$
150 - 999 0.45$ 0.45$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 9984
Set of 10

BC557C. Housing: TO-92. Resistor B: PNP transistor. BE resistor: -50V. C(in): 10pF. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 0.65V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) BC547C. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 126
BC556C

BC556C

Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE g...
BC556C
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BC546C
BC556C
Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BC546C
Set of 10
1.18$ VAT incl.
(1.18$ excl. VAT)
1.18$

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BC546C

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BC556B

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BC546A

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BC550C

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BC560C

BC560C

Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380....
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IRFP9140N

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BD239C

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ELC100UF16P-105-H

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DC voltage: 16V. Capacitance: 100uF. Diameter: 5mm. Lifespan: 2000 hours. Lenght: 11mm. Configuratio...
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Quantity in stock : 323
CONN-12010-A

CONN-12010-A

Connector type: 2.00mm pitch single row connector. Function: straight connector, soldered on printed...
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2SB647

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