Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 1.11$ | 1.11$ |
2 - 2 | 1.06$ | 1.06$ |
3 - 4 | 1.00$ | 1.00$ |
5 - 9 | 0.95$ | 0.95$ |
10 - 24 | 0.89$ | 0.89$ |
25 - 49 | 0.83$ | 0.83$ |
50 - 102 | 0.68$ | 0.68$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 1.11$ | 1.11$ |
2 - 2 | 1.06$ | 1.06$ |
3 - 4 | 1.00$ | 1.00$ |
5 - 9 | 0.95$ | 0.95$ |
10 - 24 | 0.89$ | 0.89$ |
25 - 49 | 0.83$ | 0.83$ |
50 - 102 | 0.68$ | 0.68$ |
BC560C. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 380. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BC550C. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 02:25.
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