BC556C

Quantity (Set of 10)	excl. VAT	VAT incl.
1 - 1	1.18$	1.18$
2 - 2	1.12$	1.12$
3 - 4	1.06$	1.06$
5 - 9	1.00$	1.00$
10 - 13	0.94$	0.94$

Quantity (Set of 10)	U.P
1 - 1	1.18$	1.18$
2 - 2	1.12$	1.12$
3 - 4	1.06$	1.06$
5 - 9	1.00$	1.00$
10 - 13	0.94$	0.94$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 126

Set of 10

BC556C. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BC546C. Quantity in stock updated on 24/12/2024, 02:25.

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Delivery in 2-3 days, with postal tracking!