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Semiconductors Transistors

BC546C

BC546C
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 0.92$ 0.92$
2 - 2 0.87$ 0.87$
3 - 4 0.82$ 0.82$
5 - 9 0.78$ 0.78$
10 - 24 0.73$ 0.73$
25 - 48 0.69$ 0.69$
Quantity (Set of 10) U.P
1 - 1 0.92$ 0.92$
2 - 2 0.87$ 0.87$
3 - 4 0.82$ 0.82$
5 - 9 0.78$ 0.78$
10 - 24 0.73$ 0.73$
25 - 48 0.69$ 0.69$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 475
Set of 10

BC546C. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 13:25.

Technical documentation

Equivalent products :

Quantity in stock : 17819
BC546B

BC546B

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
BC546B
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 0.1A. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: complementary transistor (pair) BC556B. BE diode: no. CE diode: no
BC546B
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 0.1A. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: complementary transistor (pair) BC556B. BE diode: no. CE diode: no
Set of 1
0.06$ VAT incl.
(0.06$ excl. VAT)
0.06$

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MOR2WS-47K

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1N4148

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BC546C

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BTB16-600BW

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Igt (max): 50mA. Igt (Type): 50mA. Ih (max): 50mA. Ih (Type): 50mA. IT(RSM) (TC=85°C): 16A. It's M:...
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1N4004

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